...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Physica, B. Condensed Matter >TEM studies of as-grown, irradiated and annealed InN films
【24h】

TEM studies of as-grown, irradiated and annealed InN films

机译：生长，辐照和退火的InN薄膜的TEM研究

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Transmission electron microscopy was applied to study structural changes of InN films grown by molecular beam epitaxy on c-sapphire substrates with a GaN buffer layer. The films were studied as-grown and also following by rapid thermal annealing, irradiation with 2 MeV He+ ions, and annealing after irradiation. Defects formed after each procedure were discussed. The results of these studies show that randomly distributed extended defects, formed upon irradiation, can come to uniform distribution throughout the samples upon annealing. An irradiation by 2 MeV He+ ions followed by thermal annealing at 425 and 475 degrees C leads to the unusual increase of the electron mobility of these films. Annealing at 500 degrees C led to the formation of In clusters and delamination of the film from the substrates. Published by Elsevier B.V.
机译：透射电子显微镜用于研究分子束外延在具有GaN缓冲层的c-蓝宝石衬底上生长的InN膜的结构变化。对薄膜进行了研究，并对其进行了快速热退火，2 MeV He +离子辐照和辐照后退火的研究。讨论了每个步骤后形成的缺陷。这些研究的结果表明，在辐照时形成的随机分布的扩展缺陷在退火后可以均匀分布在整个样品中。用2 MeV He +离子辐照，然后在425和475摄氏度下进行热退火，会导致这些薄膜的电子迁移率异常升高。在500摄氏度下退火导致In团簇的形成和薄膜与基材的分层。由Elsevier B.V.发布

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号