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首页> 外文期刊>Physica, B. Condensed Matter >Effect of alpha-particle irradiation on the electrical properties of n-type Ge
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Effect of alpha-particle irradiation on the electrical properties of n-type Ge

机译：α粒子辐照对n型Ge电学性质的影响

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摘要

Deep-level transient spectroscopy was used to investigate the effect of alpha particle irradiation on the electrical properties of n-type Ge. The samples were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radionuclide source. The main defects introduced were found to be electron traps with energy levels at E-c-0.38, E-c-0.21, E-c-0.20, E-c-0.15, and E-c-0.10eV, respectively. The main defects in alpha particle irradiation are similar to those introduced by MeV electron irradiation, where the main defect is the E-center. A quadratic increase in concentration as a function of dose is observed.
机译：使用深层瞬态光谱法研究α粒子辐照对n型Ge的电学性质的影响。使用meric 241（Am-241）放射性核素源在室温下用α粒子辐照样品。发现引入的主要缺陷是能级分别为E-c-0.38，E-c-0.21，E-c-0.20，E-c-0.15和E-c-0.10eV的电子陷阱。 α粒子辐照的主要缺陷与MeV电子辐照引入的缺陷相似，其中主要缺陷为E中心。观察到浓度随剂量呈二次方增加。

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