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首页> 外文期刊>Physica, B. Condensed Matter >Electrophoresis deposition and field emission characteristics of planar-gate-type electron source with carbon nanotubes
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Electrophoresis deposition and field emission characteristics of planar-gate-type electron source with carbon nanotubes

机译：碳纳米管平面栅型电子源的电泳沉积和场发射特性

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An electrophoretic process was developed to selectively assemble carbon nanotubes (CNTs) onto the triode structure and a CNT-based planar-gate-type electron source panel of planar gate stripe was successfully fabricated with the special electrophoretic process. In this process, the CNTs were migrated on cathode electrode in the CNT suspension by an applied voltage between the gate electrode and cathode electrode. The applied voltage was also used to keep the CNTs off adsorbing on the gate electrode. The experiment results show that the CNTs are selectively defined onto cathode electrode and each cathode electrode has the same packing density. In addition, field emission characteristics of the planar-gate-type electron source panel were studied. The anode current densities could be modified from 0 to 216 mu A/cm(2) by increasing the gate voltages from 0 to 150 V with anode bias of 1400 V for anode-cathode spacing was 500 mu m. (c) 2007 Elsevier B.V. All rights reserved.
机译：开展了电泳工艺以选择性地将碳纳米管（CNT）组装到三极管结构上，并通过特殊的电泳工艺成功地制造了基于CNT的平面栅条型平面栅型电子源面板。在该过程中，通过在栅电极和阴极电极之间施加电压，CNT在CNT悬浮液中的阴极电极上迁移。所施加的电压还用于使CNT保持不吸附在栅电极上。实验结果表明，碳纳米管被选择性地定义在阴极上，并且每个阴极具有相同的堆积密度。另外，研究了平面栅型电子源面板的场发射特性。通过将栅极电压从0 V增加到150 V（阳极偏压为1400 V，将阳极到阴极的间距为500μm），可以将阳极电流密度从0更改为216μA / cm（2）。 （c）2007 Elsevier B.V.保留所有权利。

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