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首页> 外文期刊>Physica, B. Condensed Matter >Hydrogenic donor impurity in parallel-triangular quantum wires: Hydrostatic pressure and applied electric field effects
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Hydrogenic donor impurity in parallel-triangular quantum wires: Hydrostatic pressure and applied electric field effects

机译:平行三角形量子线中的氢供体杂质:静水压力和施加的电场效应

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摘要

The combined effects of the hydrostatic pressure and in-growth direction applied electric field on the binding energy of hydrogenic shallow-donor impurity states in parallel-coupled-GaAs-Ga_(1-x)Al_xAsquantum-well wires are calculated using a variational procedure within the effective-mass and parabolic-band approximations. Results are obtained for several dimensions of the structure, shallowdonor impurity positions, hydrostatic pressure, and applied electric field. Our results suggest that external inputs such us hydrostatic pressure and in-growth direction electric field are two useful tools in order to modify the binding energy of a donor impurity in parallel-coupled-quantum-well wires.
机译:静压和向内施加电场对平行耦合的GaAs-Ga_(1-x)Al_x量子阱线中的氢浅施主杂质态的结合能的综合影响是通过以下方法计算的:有效质量和抛物线近似。获得了结构的几个尺寸,浅施主杂质位置,静水压力和施加电场的结果。我们的结果表明,外部输入(例如静水压力和向内生长的电场)是两个有用的工具,目的是修改平行耦合量子阱线中施主杂质的结合能。

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