Muon track induced current measurements in semi-insulating GaAs

Eshchenko DG; Storchak VG; Cottrell SP

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Muon track induced current measurements in semi-insulating GaAs

机译：半绝缘GaAs中的Muon轨道感应电流测量

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We report on preliminary muon-track-induced current measurements in semi-insulating (SI-) GaAs. At T = 70 K, after simultaneous treatment of the sample by muon irradiation and a strong electric field (a square wave with vertical bar E vertical bar > 10 kV/cm and the polarity changed every 1/50s) for approximately 2 h, the sample is transferred to a metastable-like state which is characterized by increased life-times for non-equilibrium electrons and holes. The sample can be returned to the original state by heating up to 250 K. Our results for SI-GaAs suggest a muon-track-induced electric-field-assisted neutralization process for the deep traps.

机译：我们报告了在半绝缘（SI-）GaAs中初步的介子轨道诱导电流测量。在T = 70 K时，在通过μ子辐射和强电场（垂直线E垂直线> 10 kV / cm且极性每1 / 50s改变一次）的方波同时处理样品后，大约2 h，样品被转移到类似亚稳态的状态，其特征是非平衡电子和空穴的寿命增加。通过加热到250 K，可以使样品恢复到原始状态。我们对SI-GaAs的结果表明，深阱陷阱采用了介子轨道诱导的电场中和过程。

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《Physica, B. Condensed Matter》 |2009年第7期|共4页
作者
Eshchenko DG; Storchak VG; Cottrell SP;
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正文语种 eng
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GaAs; Electric field; Deep centers; Detectors;

机译：砷化镓;电场;深层中心;检测器;

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专利

1. Muon track induced current measurements in semi-insulating GaAs [J] . Eshchenko DG, Storchak VG, Cottrell SP Physica, B. Condensed Matter . 2009,第5a7期

机译：半绝缘GaAs中的Muon轨道感应电流测量
2. Electron beam induced current imaging of near-contact regions in semi-insulating GaAs [J] . Brennan C.R., Chriss M.F. IEEE Transactions on Electron Devices . 1998,第9期

机译：半绝缘GaAs中近接触区的电子束感应电流成像
3. Deep level characterization in semi-insulating GaAs by photo-induced current and photo-hall effect transient spectroscopy [J] . Kiyoshi Yasutake, Hiroaki Kakiuchi, Akihiro Takeuchi 精密工学会誌 . 1997,第2期

机译：半绝缘GaAs的光致电流和霍尔效应瞬态光谱的深层表征
4. Thermally stimulated current measurements in semi-insulating LEC GaAs having undergone different heat treatments [C] . International conference on Defect recognition and image processing in semiconductors and devices . 1994

机译：热刺激的电流测量在半绝缘LEC GaAs中经过不同的热处理
5. Beam Profile Measurements Using the Straw Tracking Detectors at the Fermilab Muon g ? 2 Experiment, and a Study of Their Sensitivity to a Muon Electric Dipole Moment [D] . Charity, Saskia. 2018

机译：光束轮廓测量使用Fermilab Muon G处的秸秆跟踪探测器？ 2实验，以及他们对μON电偶极矩的敏感性的研究
6. B-periodic oscillations in the Hall-resistance induced by a dc-current-bias under combined microwave-excitation and dc-current bias in the GaAs/AlGaAs 2D system [O] . Han-Chun Liu, C. Reichl, W. Wegscheider, -1

机译：GaAs / AlGaAs 2D系统中微波激励和直流偏置共同作用下直流电流偏置引起的霍尔电阻的B周期振荡
7. Identification of Electron-Irradiation Defects in Semi-Insulating GaAs by Normalized Thermally Stimulated Current Measurements [O] . Look, David C., Fang, Z-Q., Hemsky, Joseph W., 2012

机译：通过归一化热激励电流测量识别半绝缘GaAs中的电子辐照缺陷
8. Photo-Induced Transient Spectroscopy PITS Study on Undoped LEC (Liquid Encapsulated Czochralski) Grown Semi-Insulating GaAs [R] . Fang, Z., Shan, L., Schlesinger, T. E., 1989

机译：光诱导瞬态光谱pITs研究未掺杂LEC（液体封装Czochralski）生长的半绝缘Gaas

Muon track induced current measurements in semi-insulating GaAs

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