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首页> 外文期刊>Physica, B. Condensed Matter >Investigation of optical properties of modulation doped GaN/AIGaN MQWS nanostructures
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Investigation of optical properties of modulation doped GaN/AIGaN MQWS nanostructures

机译：调制掺杂GaN / AIGaN MQWS纳米结构的光学性质研究

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Due to many important applications, the group III-nitride semiconductors have recently attractedremarkable attention among the semiconductor researchers and engineers. In this paper, we report onthe impact of the extrinsic and temporal carriers on the screening of the polarization internal fields. Theoptical efficiency of GaN/AIGaN multiple quantum well (MQW) nanostructures were studied by meansof photoluminescence (PL) and time-resolved PL measurements. Extrinsic carriers come from Si dopingin the barriers while temporal carriers originate when the samples are excited by the laser beam. Theemission peaks of MQWs in PL spectra of the undoped and low-doped samples show a shift towardshigher energy levels as excitation intensity increases, while the other samples do not exhibit such aphenomenon due to the dominance of the extrinsic carriers. The transient data confirm the results ofthe PL measurements.
机译：由于许多重要的应用，III族氮化物半导体最近在半导体研究人员和工程师中引起了极大的关注。在本文中，我们报告了外在和时空载流子对极化内场筛选的影响。通过光致发光（PL）和时间分辨的PL测量研究了GaN / AlGaN多量子阱（MQW）纳米结构的光学效率。外在的载流子来自掺杂在势垒中的硅，而临时的载流子是在样品被激光束激发时产生的。随着激发强度的增加，未掺杂和低掺杂样品的PL光谱中MQW的发射峰向高能级转移，而其他样品由于非本征载流子的优势而没有表现出这种现象。瞬态数据证实了PL测量的结果。

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