Electric field perturbation due to impurities in GaAs through single electron transistor

S. Abdalla

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Electric field perturbation due to impurities in GaAs through single electron transistor

机译：GaAs中杂质通过单电子晶体管引起的电场扰动

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The present work shows the presence of inevitable impurities in the semi-insulating GaAs domainswhen one is developing a single electron transistor (SET) and alters the quantization mechanism ofsingle electron tunneling through the island. It is also indicated that these impurities decrease theamount of energy required to change the number of electrons on the island, which leads to a drasticreduction of SET quality. A theoretical model has been presented for elucidating the I-V characteristicsof GaAs nano-crystals. It is found that this proposed model fits well the experimental data.

机译：目前的工作表明，在开发一个电子晶体管（SET）并改变单个电子隧穿岛的量子化机理时，半绝缘GaAs域中不可避免存在杂质。还表明这些杂质降低了改变岛上电子数量所需的能量，这导致SET质量的急剧降低。已经提出了用于阐明GaAs纳米晶体的I-V特性的理论模型。发现该提出的模型非常适合实验数据。

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《Physica, B. Condensed Matter》 |2009年第21期|共3页
作者
S. Abdalla;
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正文语种 eng
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关键词
Single electron transistor (SET); Impurity; Potential; Charge quantization;

机译：单电子晶体管（SET）;杂质;电位;电荷量化;

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专利

1. Electric field perturbation due to impurities in GaAs through single electron transistor [J] . S. Abdalla Physica, B. Condensed Matter . 2009,第21期

机译：GaAs中杂质通过单电子晶体管引起的电场扰动
2. Measurement of the electron ionization coefficient at low electric fields in InGaAs-based heterojunction bipolar transistors [J] . C. Canali, C. Forzan, A. Neviani, Applied Physics Letters . 1995,第9期

机译：基于InGaAs的异质结双极晶体管在低电场下的电子电离系数的测量
3. Measurement of the electron ionization coefficient at low electric fields in GaAs-based heterojunction bipolar transistors [J] . Canali C., Capasso F. IEEE Electron Device Letters . 1994,第9期

机译：GaAs基异质结双极晶体管在低电场下的电子电离系数的测量
4. Toward the manipulation of a single spin in an AlGaAs/GaAs single-electron transistor [C] . Sami Amasha, Kenneth MacLean, Dominik Zumbuehl, Quantum Information and Computation IV . 2006

机译：在AlGaAs / GaAs单电子晶体管中进行单旋转的操纵
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Donor impurity related optical and electronic properties of cylindrical GaAs-AlxGa1−x As quantum dots under tilted electric and magnetic fields [O] . Christian Heyn, C. A. Duque -1

机译：倾斜电场和磁场作用下圆柱GaAs-AlxGa1-x As量子点与施主杂质相关的光学和电子性质
7. Quantum transport of electrons confined in a thin GaAs layer by an impurity space charge potential in high magnetic fields [O] . Maan J.C., Englert T., Uihlein C., 1983

机译：在强磁场中被杂质空间电荷势限制在GaAs薄层中的电子的量子传输
8. Study on Heating of Electron Plasma by Electric Field Magnetic Field and Electromagnetic Wave Perturbations [R] . Singh, R. N. 1970

机译：电场磁场和电磁波扰动加热电子等离子体的研究

Electric field perturbation due to impurities in GaAs through single electron transistor

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