首页> 外文期刊>Physica, B. Condensed Matter >Iron–oxygen interaction in silicon: A combined XBIC/XRF-EBIC-DLTS study of precipitation and complex building
【24h】

Iron–oxygen interaction in silicon: A combined XBIC/XRF-EBIC-DLTS study of precipitation and complex building

机译:硅中的铁-氧相互作用:结合XBIC / XRF-EBIC-DLTS研究沉淀和复杂建筑物

获取原文
获取原文并翻译 | 示例
           

摘要

Iron–oxygen interaction in the Czochralski-grown silicon (CZ-Si) giving rise to their final precipitated state was investigated by means of a combination of electrical and element-sensitive techniques. The samples studied were intentionally contaminated with iron at 1150 1C and then they were annealed at temperatures of 850 and 950 1C to stimulate precipitate formation. Fe-related defect levels in silicon band gap and spatial distributions of iron-related precipitates were monitored after each annealing step. It was found that FeB-pairs being the dominant defects in as-contaminated sample transformed completely to the stable FeO-related complexes that served as precursors for further iron–oxygen coprecipitation.
机译:通过结合电学和元素敏感技术研究了在直拉生长的硅(CZ-Si)中产生最终沉淀态的铁-氧相互作用。所研究的样品在1150 1C时被铁故意污染,然后在850和950 1C的温度下退火,以刺激沉淀形成。在每个退火步骤之后,监测硅带隙中与铁有关的缺陷水平和与铁有关的沉淀物的空间分布。研究发现,FeB对是被污染样品中的主要缺陷,已完全转变为稳定的FeO相关复合物,这些复合物可作为进一步的铁氧共沉淀的前体。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号