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EBIC investigations of defect distribution in ELOG GaN films

机译：EBIC研究ELOG GaN膜中的缺陷分布

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摘要

The possibilities of the Electron Beam Induced Current (EBIC) method for the characterization of epitaxial lateral overgrowth (ELOG) GaN structures are demonstrated. The diffusion length and local donor concentrations in the structures studied are obtained by fitting the dependence of collected current in the EBIC mode on accelerating voltage with calculated one. It is shown that the local donor concentrations in the regions of lateral overgrowth measured by the EBIC are about three times lower than that in the vertically grown regions. This difference is observed in the structures with the donor concentration varying in the range from 10~(15) to 10~(17)cm~(-3). These results could be ascribed to the anisotropy of Si incorporation efficiency during growth. A comparison of the EBIC results with the results of capacitance–voltage (C–V) profiling allows us to estimate the precision of EBIC dopant concentration measurements.
机译：证明了电子束感应电流（EBIC）方法用于表征外延横向过生长（ELOG）GaN结构的可能性。所研究结构中的扩散长度和局部供体浓度是通过将EBIC模式下收集的电流与加速电压的相关性与计算得出的相关性拟合而获得的。结果表明，由EBIC测量的横向过度生长区域的局部供体浓度比垂直生长区域的局部供体浓度低约三倍。在供体浓度在10〜（15）至10〜（17）cm〜（-3）范围内变化的结构中观察到这种差异。这些结果可以归因于生长过程中Si掺入效率的各向异性。将EBIC结果与电容-电压（C-V）分布图的结果进行比较，可以估算EBIC掺杂剂浓度测量的精度。

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