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首页> 外文期刊>Physica, B. Condensed Matter >The dependence of barrier height on temperature for Pd Schottky contacts on ZnO
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The dependence of barrier height on temperature for Pd Schottky contacts on ZnO

机译：ZnO上Pd肖特基接触的势垒高度对温度的依赖性

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摘要

Temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements have been performed on Pd/ZnO Schottky barrier diodes in the range 60-300 K. The room temperature values for the zero bias barrier height from the I-V measurements (Phi(I-V)) was found to be 0.52 eV and from the C-V measurements (Phi(C-V)) as 3.83 eV. From the temperature dependence of forward bias I-V, the barrier height was observed to increase with temperature, a trend that disagrees with the negative temperature coefficient for semiconductor material. The C-V barrier height decreases with temperature, a trend that is in agreement with the negative temperature coefficient of semiconductor material. This has enabled us to fit two curves in two regions (60-120 K and 140-300 K). We have attributed this behaviour to a defect observed by DLTS with energy level 0.31 eV below the conduction band and defect concentration of between 4 x 10(16) and 6 x 10(16) cm(-3) that traps carriers, influencing the determination of the barrier height.
机译：在60-300 K范围内的Pd / ZnO肖特基势垒二极管上进行了与温度相关的电流-电压（IV）和电容-电压（CV）测量。IV测量中零偏压势垒高度的室温值（Phi （IV））为0.52 eV，CV测量值（Phi（CV））为3.83 eV。从正向偏压I-V的温度依赖性来看，势垒高度随温度而增加，这种趋势与半导体材料的负温度系数不一致。 C-V势垒高度随温度而降低，这种趋势与半导体材料的负温度系数一致。这使我们能够在两个区域（60-120 K和140-300 K）中拟合两条曲线。我们将此行为归因于DLTS所观察到的缺陷，其能级低于导带0.31 eV，缺陷浓度在4 x 10（16）至6 x 10（16）cm（-3）之间，从而俘获了载流子，影响了测定屏障高度

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