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首页> 美国政府科技报告 >Characterization of Molybdenum Disilicide/Gallium Arsenide Schottky Barrier Contacts at Elevated Temperatures
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Characterization of Molybdenum Disilicide/Gallium Arsenide Schottky Barrier Contacts at Elevated Temperatures

机译：高温下二硅化钼/砷化镓肖特基势垒接触的表征

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The effects of heat treatment up to 800 C on planar magnetron sputter-deposited MoSi2 Schottky barrier contacts to n-type GaAs were studied to determine the feasibility of using MoSi2 as the high thermal stability Schottky contact in a self-aligned-gate GaAs MESFET process. Current-voltage data for MoSi2-GaAs Schottky barrier diodes revealed a decreasing barrier height and an increasing ideality factor above 500 C. Auger electron, Rutherford backscattering, ion microprobe, and cross-sectional TEM analyses were used to detect Ga and As out-diffusion into MoSi2 at T > or = 550 and 600 C, respectively. The MoSi2-GaAs interface exhibited increasing broadening with increasing annealing temperatuare. The electrical degradation abovd 500 C is believed to be the result of the formation of an n (+) surface layer by the diffusion of Si from MoSi2 into GaAs.

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