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首页> 外文期刊>Physica, B. Condensed Matter >Deep level transient spectroscopy signatures of majority traps in GaN p-n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substrates
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Deep level transient spectroscopy signatures of majority traps in GaN p-n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substrates

机译：金属有机气相外延技术在GaN衬底上生长的GaN p-n二极管中多数陷阱的深层瞬态光谱学特征

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摘要

In this study, we present the results of investigation on p–n GaN diodes by means of deep level transient spectroscopy (DLTS) within the temperature range of 77–350 K. Si-doped GaN layers were grown by metal-organic vapor-phase epitaxy technique (MOVPE) on the free-standing GaN substrates. Subsequently Mg-doped GaN layers were grown. To perform DLTS measurements Ni/Au contacts to p-type material and Ti/Au contacts to n-type material were processed. DLTS signal spectra revealed the presence of two majority traps of activation energies obtained from Arrhenius plots equal to E_1=0.22 eV and E_2=0.65 eV. In present work we show that the trap E_1 is linked with the extended defects whereas the trap E_2 is the point defect related. Its capture cross section is thermally activated with energy barrier for capture equal to 0.2 eV.
机译：在这项研究中，我们介绍了在77-350 K的温度范围内通过深能级瞬态光谱（DLTS）对p–n GaN二极管进行研究的结果。通过有机金属气相生长了掺杂Si的GaN层在独立式GaN衬底上的外延技术（MOVPE）。随后，生长掺Mg的GaN层。为了进行DLTS测量，处理了与p型材料的Ni / Au接触和与n型材料的Ti / Au接触。 DLTS信号光谱揭示了从两个相等于E_1 = 0.22 eV和E_2 = 0.65 eV的Arrhenius图获得的激活能陷阱。在目前的工作中，我们表明陷阱E_1与扩展缺陷相连，而陷阱E_2与点缺陷有关。它的俘获截面被能量垒热激活，俘获等于0.2 eV的能量。

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