Relation between grazing incident X-ray diffraction and surface defects in silicon doped GaAs

J.A. Villada; S. Jimenez-Sandoval; M. Lopez-Lopez; L. Banos; M.E. Rodrguez-Garca

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Relation between grazing incident X-ray diffraction and surface defects in silicon doped GaAs

机译：硅掺杂GaAs中掠入射X射线衍射与表面缺陷的关系

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Grazing incident X-ray diffraction is used to study oval defects on the surface of silicon doped GaAs layers grown by means of molecular beam epitaxy. The amplitude of the (1 1 3) peak from the diffraction data is associated with the defect density obtained from scanning electron microscopy images. These images reveal two different kinds of defects for all samples. It was proven that variations in the silicon effusion cell temperature affect the defect density. By increasing the cell temperature the defect density increases.

机译：掠入射X射线衍射用于研究通过分子束外延生长的硅掺杂GaAs层表面的椭圆形缺陷。来自衍射数据的（1 1 3）峰的振幅与从扫描电子显微镜图像获得的缺陷密度相关。这些图像揭示了所有样品的两种不同类型的缺陷。事实证明，硅扩散池温度的变化会影响缺陷密度。通过提高电池温度，缺陷密度增加。

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《Physica, B. Condensed Matter》 |2010年第9期|共4页
作者
J.A. Villada; S. Jimenez-Sandoval; M. Lopez-Lopez; L. Banos; M.E. Rodrguez-Garca;
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正文语种 eng
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关键词
Silicon doped GaAs; Grazing incident X-ray diffraction; Oval defects;

机译：掺硅砷化镓;掠入射X射线衍射;椭圆形缺陷;

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1. Relation between grazing incident X-ray diffraction and surface defects in silicon doped GaAs [J] . J.A. Villada, S. Jimenez-Sandoval, M. Lopez-Lopez, Physica, B. Condensed Matter . 2010,第9期

机译：硅掺杂GaAs中掠入射X射线衍射与表面缺陷的关系
2. Polarity dependence of hexagonal inclusions and cubic twins in GaN/GaAs(001) epilayers measured by conventional X-ray Pole figure and grazing incident diffraction pole figure [J] . B.Qu, X.H.Zheng, Y.T.Wang Journal of Crystal Growth . 2001,第1期

机译：常规X射线极图和掠入射衍射极图测量的GaN / GaAs（001）外延层中六角形夹杂物和立方孪晶的极性依赖性
3. Structural characterisation of a GaAs surface wire structure by triple axis X-ray grazing incidence diffraction [J] . Darowski N., Pietsch U., Wang K., Physica, B. Condensed Matter . 1998,第1a4期

机译：GaAs表面线结构的三轴X射线掠入射衍射结构表征
4. Non-destructive Analysis of Surface Stresses Using Grazing Incident X-ray Diffraction [C] . C. Braham, A. Baczmanski, W. Seiler, International Symposium on Residual Stresses . 2005

机译：采用放牧入射X射线衍射的表面应力的非破坏性分析
5. X-ray rocking curve and x-ray diffraction analysis of defects and strains in materials [D] . Gondhalekar, Vasant Balkrishna 1993

机译：材料中缺陷和应变的X射线摇摆曲线和X射线衍射分析
6. Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams [O] . Genziana Bussone, Rüdiger Schott, Andreas Biermanns, -1

机译：单个GaAs纳米线在聚焦离子束定义的位置上的掠入射X射线衍射
7. Polarity dependence of hexagonal inclusions and cubic twins in GaN/GaAs(001) epilayers measured by conventional X-ray pole figure and grazing incident diffraction pole figure [O] . Qu B, Zheng XH, Wang YT, 2001

机译：用常规X射线极图和掠入射衍射极图测量GaN / GaAs（001）外延层中六角形夹杂物和立方孪晶的极性依赖性
8. Grazing Incidence X-Ray Scattering Study of Defect Structures in MBE GaAs/Si Using Synchrotron Radiation [R] . Laderman, S. S. , Kortright, J. , Scott, M. , 1987

机译：基于同步辐射的mBE Gaas / si缺陷结构的放大入射X射线散射研究

Relation between grazing incident X-ray diffraction and surface defects in silicon doped GaAs

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