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首页> 外文期刊>Physica, B. Condensed Matter >The electrical, optical, structural and thermoelectrical characterization of n- And p-type cobalt-doped SnO_2 transparent semiconducting films prepared by spray pyrolysis technique
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The electrical, optical, structural and thermoelectrical characterization of n- And p-type cobalt-doped SnO_2 transparent semiconducting films prepared by spray pyrolysis technique

机译：喷雾热解法制备n型和p型钴掺杂SnO_2透明半导体薄膜的电，光，结构和热电特性

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摘要

The electrical, optical and structural properties of Cobalt (Co) doped SnO_2 transparent semiconducting thin films, deposited by the spray pyrolysis technique, have been studied. The SnO_2:Co films, with different Cocontent, were deposited on glass substrates using an aqueous-ethanol solution consisting of tin and cobalt chlorides. X-ray diffraction studies showed that the SnO_2:Co films were polycrystalline only with tin oxide phases and preferential orientations along (1 1 0) and (2 11) planes and grain sizes in the range 19-82 nm. Optical transmittance spectra of the films showed high transparency ～ 75-90% in the visible region, decreasing with increase in Co-doping. The optical absorption edge for undoped SnO_2 films was found to be 3.76 eV, while for higher Co-doped films shifted toward higher energies (shorter wavelengths) in the range 3.76-4.04 eV and then slowly decreased again to 4.03 eV. A change in sign of the Hall voltage and Seebeck coefficient was observed for a specific acceptor dopant level ～11.4at% in film and interpreted as a conversion from n-type to p-type conductivity. The thermoelectric electro-motive force (e.m.f.) of the films was measured in the temperature range 300-500 K and Seebeck coefficients were found in the range from -62 to +499 μVK~(-1) for various Co-doped SnO_2 films.
机译：研究了通过喷雾热解技术沉积的钴（SnO 2）掺杂SnO_2透明半导体薄膜的电学，光学和结构性能。使用包含氯化锡和​​氯化钴的乙醇水溶液，将具有不同Co含量的SnO_2：Co膜沉积在玻璃基板上。 X射线衍射研究表明，SnO_2：Co膜是多晶的，仅具有氧化锡相，并沿（1 1 0）和（2 11）平面优先取向，晶粒尺寸在19-82 nm之间。薄膜的透射光谱在可见光区具有较高的透明性，约为75-90％，随着Co掺杂的增加而降低。发现未掺杂的SnO_2薄膜的光吸收边缘为3.76 eV，而较高掺杂的Co掺杂的薄膜在3.76-4.04 eV范围内向较高能量（较短波长）移动，然后又缓慢下降至4.03 eV。对于膜中特定的受体掺杂水平〜11.4原子％，观察到霍尔电压和塞贝克系数的符号变化，并解释为从n型电导率到p型电导率的转换。在300-500K的温度范围内测量膜的热电动势（e.m.f.），并且对于各种Co掺杂的SnO_2膜，发现塞贝克系数在-62至+499μVK·（-1）的范围内。

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