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首页> 外文期刊>Physica, B. Condensed Matter >A possible origin of room temperature ferromagnetism in IndiumTin oxide thin film: Surface spin polarization and ferromagnetism
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A possible origin of room temperature ferromagnetism in IndiumTin oxide thin film: Surface spin polarization and ferromagnetism

机译：铟锡氧化物薄膜中室温铁磁性的可能起源：表面自旋极化和铁磁性

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摘要

Room temperature ferromagnetism in both transition-metals doped and undoped semiconductor thin films and nanostructures challenges our understanding of the magnetism in solids. In this report, we performed the magnetic measurement and Andreev reflection spectroscopy study on undoped IndiumTin oxide (ITO) thin films and bulk samples. The magnetic measurement results of thin films show that the total magnetization/cm2 is thickness independent. Prominent ferromagnetism signal was also discovered in bulk samples. Spin polarized electron transports were probed on ITO thin film/superconductor interface and bulk samples surface/superconductor interface. Based on the magnetic measurement results and spin polarization measurement data, we propose that the ferromagnetism in this material originates from the surface spin polarization and this surface polarization may also explain the room temperature ferromagnetism discovered in other undoped oxide semiconductor thin films and nanostructures.
机译：掺杂和未掺杂过渡金属的半导体薄膜和纳米结构中的室温铁磁性都对我们对固体磁性的理解提出了挑战。在本报告中，我们对未掺杂的氧化铟锡（ITO）薄膜和块状样品进行了磁测量和Andreev反射光谱研究。薄膜的磁测量结果表明，总磁化强度/ cm2与厚度无关。在大量样品中也发现了突出的铁磁性信号。在ITO薄膜/超导体界面和块状样品表面/超导体界面上探测自旋极化电子传输。根据磁测量结果和自旋极化测量数据，我们认为该材料中的铁磁性源自表面自旋极化，并且该表面极化也可以解释在其他未掺杂氧化物半导体薄膜和纳米结构中发现的室温铁磁性。

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