Effect of electrical conduction properties on magnetic behaviors of Cu-doped ZnO thin films

Kim C.O.; Kim S.; Oh H.T.; Choi S.-H.; Shon Y.; Lee S.; Hwang H.N.; Hwang C.-C.

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Effect of electrical conduction properties on magnetic behaviors of Cu-doped ZnO thin films

机译：导电性能对掺杂Cu的ZnO薄膜磁行为的影响

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The influence of electrical conduction properties of Cu-doped ZnO (ZnO:Cu) thin films on their magnetic behaviors was investigated. The electrical properties were controlled from n-type to p-type by changing Cu concentration (n_(Cu)), which was analyzed by Hall-effect measurements and X-ray photoelectron spectroscopy. The p-type samples with n_(Cu)<1 mol% were obviously ferromagnetic, whilst the n-type samples with n _(Cu)≤0.75 mol% exhibited paramagnetism. By increasing n_(Cu) from 1 to 3 mol%, the ferromagnetic properties were observed to be degraded due to the existence of Cu and CuO_2 anti-ferromagnetic clusters. These results suggest that hole carriers help to couple the ferromagnetic channels in ZnO:Cu.

机译：研究了掺杂Cu的ZnO（ZnO：Cu）薄膜的导电性能对其磁性能的影响。通过改变Cu浓度（n_（Cu））将电特性从n型控制为p型，并通过霍尔效应测量和X射线光电子能谱分析了铜的浓度。 n_（Cu）<1 mol％的p型样品明显是铁磁性的，而n_（Cu）≤0.75mol％的n型样品表现出顺磁性。通过将n_（Cu）从1mol％增加到3mol％，观察到由于Cu和CuO_2反铁磁簇的存在，铁磁性能降低。这些结果表明，空穴载流子有助于耦合ZnO：Cu中的铁磁通道。

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《Physica, B. Condensed Matter》 |2010年第22期|共4页
作者
Kim C.O.; Kim S.; Oh H.T.; Choi S.-H.; Shon Y.; Lee S.; Hwang H.N.; Hwang C.-C.;
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正文语种 eng
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Cu; Doping type; Ferromagnetism; Hole carriers; ZnO;

机译：铜;掺杂类型;铁磁性;空穴载体;ZnO;

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1. Effect of electrical conduction properties on magnetic behaviors of Cu-doped ZnO thin films [J] . Kim C.O., Kim S., Oh H.T., Physica, B. Condensed Matter . 2010,第22期

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Effect of electrical conduction properties on magnetic behaviors of Cu-doped ZnO thin films

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