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首页> 外文期刊>Physica, B. Condensed Matter >Influence of high-energy electron irradiation on field emission properties of multi-walled carbon nanotubes (MWCNTs) films
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Influence of high-energy electron irradiation on field emission properties of multi-walled carbon nanotubes (MWCNTs) films

机译：高能电子辐照对多壁碳纳米管（MWCNTs）薄膜场发射性能的影响

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摘要

The effect of very high energy electron beam irradiation on the field emission characteristics of multi-walled carbon nanotubes (MWCNTs) has been investigated. The MWCNTs films deposited on silicon (Si) substrates were irradiated with 6 MeV electron beam at different fluence of 1×10 ~(15), 2×10~(15) and 3×10~(15) electrons/cm~2. The irradiated films were characterized using scanning electron microscope (SEM) and micro-Raman spectrometer. The SEM analysis clearly revealed a change in surface morphology of the films upon irradiation. The Raman spectra of the irradiated films show structural damage caused by the interaction of high-energy electrons. The field emission studies were carried out in a planar diode configuration at the base pressure of ～1×10 ~(-8) mbar. The values of the threshold field, required to draw an emission current density of ～1 μA/cm~2, are found to be ～0.52, 1.9, 1.3 and 0.8 V/μm for untreated, irradiated with fluence of 1×10~(15), 2×10~(15) and 3×10~(15) electrons/cm~2. The irradiated films exhibit better emission current stability as compared to the untreated film. The improved field emission properties of the irradiated films have been attributed to the structural damage as revealed from the Raman studies.
机译：研究了非常高能量的电子束辐照对多壁碳纳米管（MWCNTs）场发射特性的影响。用6 MeV电子束以1×10〜（15），2×10〜（15）和3×10〜（15）电子/ cm〜2的不同通量辐照沉积在硅（Si）衬底上的MWCNTs膜。使用扫描电子显微镜（SEM）和显微拉曼光谱仪表征被辐照的膜。 SEM分析清楚地揭示了辐照后膜的表面形态的变化。辐照薄膜的拉曼光谱显示出由于高能电子相互作用而引起的结构破坏。场发射研究是在平面二极管配置下在〜1×10〜（-8）mbar的基本压力下进行的。对于未处理，以1×10〜（1）的通量辐照，得出发射电流密度为〜1μA/ cm〜2所需的阈值场的值分别为〜0.52、1.9、1.3和0.8 V /μm。 15），2×10〜（15）和3×10〜（15）个电子/ cm〜2。与未处理的膜相比，被辐照的膜表现出更好的发射电流稳定性。如从拉曼研究中所揭示的，被辐照膜的场发射性能的改善归因于结构损伤。

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