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首页> 外文期刊>Physica, B. Condensed Matter >I-V characteristics of vanadium-flavonoid complexes based Schottky diodes
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I-V characteristics of vanadium-flavonoid complexes based Schottky diodes

机译：钒-类黄酮配合物肖特基二极管的I-V特性

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摘要

In this study, we have investigated the currentvoltage characteristics of the Schottky diodes of two vanadium complexes, VO_2(3-fl) (1) (3-fl=3-hydroxyflavone) and VO(acac)_2 (2), (acac=acetylacetonate), and their composites with TiO_2. Thin films of vanadium complexes and their composites were deposited by the centrifugation method. Currentvoltage characteristics of the samples were processed by the modified Shockley equation, Cheung functions and space-charge limited currents (SCLC) approaches. Different junction parameters, such as series resistances, reverse saturation currents, ideality factors and barrier height of the samples, were determined.
机译：在这项研究中，我们研究了两种钒配合物VO_2（3-fl）（1）（3-fl = 3-羟基黄酮）和VO（acac）_2（2）的肖特基二极管的电流电压特性，（acac =乙酰丙酮化物）及其与TiO_2的复合物。钒配合物及其复合物的薄膜通过离心法沉积。样品的电流电压特性通过改进的Shockley方程，Cheung函数和空间电荷限制电流（SCLC）方法进行处理。确定了不同的结参数，例如串联电阻，反向饱和电流，理想因子和样品的势垒高度。

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