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首页> 外文期刊>Physica, B. Condensed Matter >Dependency of barrier height and ideality factor on identically produced small Au/p-Si Schottky barrier diodes
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Dependency of barrier height and ideality factor on identically produced small Au/p-Si Schottky barrier diodes

机译：势垒高度和理想因子对相同生产的小型Au / p-Si肖特基势垒二极管的依赖性

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摘要

Small high-quality Au/p-Si Schottky barrier diodes (SBDs) with extremely low reverse leakage current using wet lithography were produced. Their effective barrier heights (BHs) and ideality factors from currentvoltage (IV) characteristics were measured by a conducting probe atomic force microscope (C-AFM). In spite of identical preparation of the diodes there was a diode-to-diode variation in ideality factor and barrier height parameters. By extrapolating the plots the built-in potential of the Au/p-Si contact was obtained as V_(bi)=0.5425 V and the barrier height value (Φ_(B(C-V))) was calculated to be Φ_(B(C-V))=0.7145 V for Au/p-Si for a typical 100 μm diode diameters. In the present work the nonlinear dependency of BH and ideality factor on the diode diameter studied fundamentally and an experimental relation for this new behavior is derived. It is found that for the diodes with diameters smaller than 100 μm the diode barrier height and ideality factor dependency to their diameters and correlation between the diode barrier height and its ideality factor are nonlinear, which is similar to the earlier reported different metal semiconductor diodes in the literature, these parameters for the here manufactured diodes with diameters more than 100 μm are also linear. Based on the very obvious sub-nanometer C-AFM produced pictures, the scientific evidence behind this controversy is also explained.
机译：使用湿法光刻技术生产了具有极低反向泄漏电流的小型高质量Au / p-Si肖特基势垒二极管（SBD）。通过导电探针原子力显微镜（C-AFM）测量了它们的有效势垒高度（BHs）和来自电流电压（IV）特性的理想因子。尽管二极管的准备方式相同，但理想因数和势垒高度参数在二极管之间仍然存在差异。通过对图进行外推，得出Au / p-Si触点的内置电势为V_（bi）= 0.5425 V，并且势垒高度值（Φ_（B（CV）））计算为Φ_（B（CV） ））= 0.7145 V（对于Au / p-Si，典型的二极管直径为100μm）。在目前的工作中，对BH和理想因子对二极管直径的非线性依赖性进行了基础研究，并得出了这种新行为的实验关系。发现对于直径小于100μm的二极管，二极管势垒高度和理想因子对其直径的依赖性以及二极管势垒高度与其理想因子之间的相关性是非线性的，这与早期报道的不同金属半导体二极管相似。在文献中，直径大于100μm的此处制造的二极管的这些参数也是线性的。基于非常明显的亚纳米C-AFM产生的图片，还解释了该争议背后的科学证据。

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