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首页> 外文期刊>Physica, B. Condensed Matter >Optical properties of Ge-As-Te thin films
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Optical properties of Ge-As-Te thin films

机译：Ge-As-Te薄膜的光学性质

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摘要

Different compositions of Ge_xAs_(10)Te_(90-x) (x = 5, 10, 15, 20, and 25 at%) chalcogenide glasses were prepared by the usual melt quench technique. Amorphous Ge_xAs_(10)Te_(90-x) thin films were deposited onto cleaned glass substrates using the thermal evaporation method. Transmission spectra, T(l), of the films at normal incidence were measured in the wavelength range 400-2500 nm. A straightforward analysis proposed by Swanepoel based on the use of the maxima and minima of the interference fringes has been used to drive the film thickness, d, the complex index of refraction, n, and the extinction coeficient, k. It was found that, the addition of Ge content at the expense of Te atoms shifts the optical band gap to the short wavelength side (blue shift of the optical band gap) while the refractive index are found to decreases. The obtained results of the refractive index were discussed in terms of the electronic polarizability and the single-oscillator Wemple and DiDomenico model (WDD). The optical absorption is due to the allowed non-direct optical transitions. The observed increase in the optical band gap with the increase in Ge content was discussed in terms of the width of the tail states in the gap and the covalent bond approach.
机译：通过常规的熔融淬火技术制备了不同组成的Ge_xAs_（10）Te_（90-x）（x = 5、10、15、20和25 at％）硫属化物玻璃。使用热蒸发方法将非晶Ge_xAs_（10）Te_（90-x）薄膜沉积到清洁的玻璃基板上。在400-2500nm的波长范围内测量了法线入射的膜的透射光谱T（1）。 Swanepoel基于干涉条纹的最大值和最小值的使用提出的直接分析已被用于驱动薄膜厚度d，折射率的复数n和消光系数k。已经发现，以Te原子为代价的Ge含量的添加使光学带隙向短波长侧移动（光学带隙的蓝移），而发现折射率降低。根据电子极化率和单振荡器Wemple and DiDomenico模型（WDD）讨论了所获得的折射率结果。光学吸收归因于允许的非直接光学跃迁。根据间隙中尾态的宽度和共价键方法，讨论了随着Ge含量的增加，光学带隙的增加。

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