Modeling and simulation of GaN/Al0.3Ga0.7N new multilayer nano-heterostructure

Alvi PA; Gupta S; Siddiqui MJ; Sharma G; Dalela S

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Modeling and simulation of GaN/Al0.3Ga0.7N new multilayer nano-heterostructure

机译：GaN / Al0.3Ga0.7N新型多层纳米异质结构的建模与仿真

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In this paper we have proposed a simple model and performed one-dimensional simulation for GaN/Al0.3Ga0.7N multi-layer new nano-heterostructure in order to obtain the energy band profile, which graphs the energy of the conduction and valence band edges versus position. Also, potential distribution has been studied throughout the modeled nano-heterostructure along with electron-hole densities and space charge densities. The total size of the sample was 288 nm grown on pseudomorph GaN including ohmic contact with the metal on edges. The quantum region is over the whole heterostructure but the interesting region in the heterostructure has been found in between 100 and 196 nm, which can be applicable for a particular device application.

机译：在本文中，我们提出了一个简单的模型，并对GaN / Al0.3Ga0.7N多层新型纳米异质结构进行了一维模拟，以获得能带分布图，该图绘制了导带和价带边缘的能量与位置。同样，已经研究了整个建模的纳米异质结构中的电势分布以及电子空穴密度和空间电荷密度。样品的总尺寸在假晶GaN上生长288 nm，包括与边缘金属的欧姆接触。量子区域在整个异质结构上，但是发现异质结构中有趣的区域在100到196 nm之间，这可以用于特定的设备应用。

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《Physica, B. Condensed Matter》 |2010年第10期|共5页
作者
Alvi PA; Gupta S; Siddiqui MJ; Sharma G; Dalela S;
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正文语种 eng
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关键词
GaN; AlGaN; Nano-heterostructure; Energy band structure;

机译：GaN;AlGaN;纳米异质结构;能带结构;

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专利

1. Modeling and simulation of GaN/Al0.3Ga0.7N new multilayer nano-heterostructure [J] . Alvi PA, Gupta S, Siddiqui MJ, Physica, B. Condensed Matter . 2010,第10期

机译：GaN / Al0.3Ga0.7N新型多层纳米异质结构的建模与仿真
2. Modeling of the wafer bow in GaN-on-Si epiwafers employing GaN/AlN multilayer buffer structures [J] . Miyoshi Makoto, Watanabe Arata, Egawa Takashi Semiconductor science and technology . 2016,第10期

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3. High-resolution X-ray diffraction analysis of Al_xGa_(1-x)N/In_xGa_(1-x)N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations [J] . Sanjay Kumar Jana, Partha Mukhopadhyay, Saptarsi Ghosh, Journal of Applied Physics . 2014,第17pta1期

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4. Thermal residual stress modeling in AlN and GaN multilayer samples [C] . K.Wang, R.R.Reeber Symposium on GaN and related alloys . 1999

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Modeling and simulation of GaN/Al0.3Ga0.7N new multilayer nano-heterostructure

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