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首页> 外文期刊>Physica, B. Condensed Matter >Influence of indium content on the optical, electrical and crystallization kinetics of Se _(100-x)In _xthin films deposited by flash evaporation technique
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Influence of indium content on the optical, electrical and crystallization kinetics of Se _(100-x)In _xthin films deposited by flash evaporation technique

机译：铟含量对闪蒸沉积Se_（100-x）In_x薄膜的光学，电学和结晶动力学的影响

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摘要

Thin films of Se _(100-x)In _x (x=10, 20 and 30 at%) have been prepared by the flash evaporation technique. The effect of the indium content on optical band gap of the Se _(100-x) In _x films has been investigated by the optical characterization. The optical band gap values of the Se _(100-x) In _x thin films were determined and are found to decrease with increasing indium content. This indium content changes the width of localized states in the optical band gaps of the thin films. It was found that the optical band gap, E _g, of the Se _(100-x) In _x films changes from 1.78 to 1.37 eV with increasing indium content from 10 to 30 at%, while the width of localized states in optical band gap changes from 375 to 342 meV. The temperature dependence of the dark electrical conductivity were studied in the temperature range 303433 K and revealed two activation energies providing two electrical conduction mechanisms. The activation energy of the Se _(100-x) In _x films in the high temperature region changes from 0.49 to 0.32 eV with increasing indium content from 10 to 30 at%, while the hopping activation energy in the lower temperature region changes from 0.17 to 0.22 meV. The change in the electrical conductivity with time during the amorphous-to-crystalline transformation is recorded for amorphous Se _(100-x)In _x films at two points of isothermal temperatures 370 and 400 K. The formal crystallization theory of Avrami has been used to calculate the kinetic parameters of crystallization.
机译：通过闪蒸技术制备了Se_（100-x）In_x（x ＝ 10、20和30at％）的薄膜。通过光学表征研究了铟含量对Se _（100-x）In _x薄膜的光学带隙的影响。测定了Se _（100-x）In _x薄膜的光学带隙值，发现其随铟含量的增加而减小。该铟含量改变了薄膜的光学带隙中的局部状态的宽度。结果发现，随着铟含量从10 at％增至30 at％，Se _（100-x）In _x薄膜的光学带隙E _g从1.78改变为1.37 eV，而光带中的局部态宽度增加差距从375变为342 meV。在303433 K的温度范围内研究了暗电导率的温度依赖性，并揭示了提供两种电导通机制的两种活化能。随着铟含量从10at％增至30at％，高温区域中的Se _（100-x）In _x薄膜的活化能从0.49 eV改变为0.32 eV，而低温区域中的跳跃活化能从0.17改变为至0.22 meV。记录了非晶Se _（100-x）In _x薄膜在等温370和400 K的两个点时，从非晶到晶体转变过程中电导率随时间的变化。已使用Avrami的形式化结晶理论计算结晶动力学参数。

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