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首页> 外文期刊>Physica, B. Condensed Matter >Wet-chemical dip-coating preparation of highly oriented copperaluminum oxide thin film and its opto-electrical characterization
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Wet-chemical dip-coating preparation of highly oriented copperaluminum oxide thin film and its opto-electrical characterization

机译：高取向铜铝氧化物薄膜的湿化学浸涂制备及其光电特性

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摘要

Transparent p-type semiconducting copper aluminum oxide thin film has been synthesized by a wet-chemical route. CuCl and AlCl_3, dissolved in HCl, are taken as starting materials. pH value of the solution is controlled by adding a measured amount of NaOH into it. Films are deposited by dip-coating technique on glass and Si substrates followed by annealing in air at 500 °C for 3 h. XRD pattern confirms the crystalline CuAlO_2 phase formation in the film and also indicates a strong (0 0 6) orientation. UVvis spectrophotometric measurements show high transparency of the film in the visible region with a direct allowed bandgap of 3.94 eV. Electrical measurements depict the thermally activated conduction within the films. Thermoelectric measurements confirm the p-type nature of the films. Compositional analysis shows the presence of excess (nonstoichiometric) oxygen within the material, which is incorporated during the air-annealing of the film. According to defect equilibrium, this excess oxygen is predicted to cause the p-type conductivity of the film. This type of cost-effective solution-based technique is very useful for volume production of this kind of technologically important material for transparent electronic and other diverse applications.
机译：通过湿化学法合成了透明的p型半导体铜铝氧化物薄膜。溶解在HCl中的CuCl和AlCl_3被用作起始原料。通过向溶液中加入一定量的NaOH来控制溶液的pH值。通过浸涂技术将膜沉积在玻璃和Si基板上，然后在500°C的空气中退火3小时。 XRD图证实了膜中结晶的CuAlO_2相的形成，并且还指示出强的（0 0 6）取向。 UVvis分光光度法测量显示，可见光区域的薄膜具有很高的透明度，直接带隙为3.94 eV。电学测量描述了膜内的热活化传导。热电测量证实了膜的p型性质。成分分析表明材料中存在过量的（非化学计量的）氧气，在薄膜的空气退火过程中会掺入氧气。根据缺陷平衡，预计该过量氧气会引起薄膜的p型导电性。这种类型的具有成本效益的基于解决方案的技术对于批量生产这种具有重要技术意义的透明电子和其他各种应用的材料非常有用。

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