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首页> 外文期刊>Physica, B. Condensed Matter >Electronic structure of single crystal and highly oriented pyrolytic graphite from ARPES and KRIPES
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Electronic structure of single crystal and highly oriented pyrolytic graphite from ARPES and KRIPES

机译：ARPES和KRIPES制备的单晶和高取向热解石墨的电子结构

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摘要

We present a comparative study of the near fermi-level electronic structure of single crystal and highly oriented pyrolytic graphite (HOPG). Angle resolved photoelectron spectroscopy and angle resolved inverse photoelectron spectroscopy have been used to probe the occupied and unoccupied electronic states, respectively. The band dispersions showed by single crystal graphite along its ΓK and ΓM symmetry directions were found to be in agreement with calculated band structure of graphite. The π bands of single crystal graphite were found to have a splitting of ～0.5eV at the K-point. We also observe the presence of a quasiparticle peak below E _F at the K point at low temperature which indicates a strong electronphonon coupling in graphite. In HOPG, the M and K points like features were found to be present in the same radial direction due to the superposition of the ΓM and ΓK directions. Results from our angle resolved inverse photoemission spectroscopy present the dispersion of the conduction band states, particularly the lower ~π band. We have also found the presence of some non-dispersive features in both the valence and the conduction bands.
机译：我们目前对单晶和高取向热解石墨（HOPG）的近费米能级电子结构进行比较研究。角度分辨光电子能谱和角度分辨逆光电子能谱已分别用于探测占据和未占据的电子态。发现单晶石墨沿其ΓK和ΓM对称方向显示的能带分散与所计算的石墨的能带结构一致。发现单晶石墨的π带在K点处有〜0.5eV的分裂。我们还观察到在低温下在K点的E _F以下存在一个准粒子峰，这表明石墨中有很强的电子声子耦合。在HOPG中，由于ΓM和ΓK方向的重叠，发现M和K点状特征在相同的径向方向上存在。从我们的角度解析的反向光发射光谱学获得的结果显示了导带状态的分散，尤其是较低的〜π带。我们还发现在价带和导带中都存在一些非色散特征。

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