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首页> 外文期刊>Physica, B. Condensed Matter >Different crystallization processes of as-deposited amorphous Ge _2Sb _2Te _5 films on nano- and picosecond single laser pulse irradiation
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Different crystallization processes of as-deposited amorphous Ge _2Sb _2Te _5 films on nano- and picosecond single laser pulse irradiation

机译：纳秒和皮秒单脉冲激光辐照沉积的非晶Ge _2Sb _2Te _5薄膜的不同结晶过程

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摘要

The crystallization dynamics of as-deposited amorphous Ge _2Sb _2Te _5 films induced by nano- and picosecond single laser pulse irradiation is studied using in situ reflectivity measurements. Compared with nanosecond laser pulse, the typical recalescence phenomenon did not appear during the picosecond laser pulse-induced crystallization processes when the pulse fluence gradually increased from crystallization to ablation threshold. The absence of melting and recalescence phenomenon significantly decreased the crystallization time from hundreds to a few tens of nanoseconds. The role of pulse duration time scale on the crystallization process is qualitatively analyzed.
机译：利用原位反射率测量研究了纳米和皮秒单激光脉冲辐照诱导沉积的非晶Ge _2Sb _2Te _5薄膜的结晶动力学。与纳秒激光脉冲相比，皮秒激光脉冲诱导的结晶过程中，当脉冲通量从结晶到消融阈值逐渐增加时，不会出现典型的重发光现象。没有熔化和复光现象会大大缩短结晶时间，从数百纳秒减少到几十纳秒。定性地分析了脉冲持续时间尺度在结晶过程中的作用。

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