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首页> 外文期刊>Physica, B. Condensed Matter >Phonon and electron transport in aluminum thin film: Influence of film thickness on electron and lattice temperatures
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Phonon and electron transport in aluminum thin film: Influence of film thickness on electron and lattice temperatures

机译：铝薄膜中的声子和电子传输：薄膜厚度对电子和晶格温度的影响

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摘要

Influence of film thickness on non-equilibrium energy transport in the aluminum thin film is examined. The solutions of Boltzmann equation and the modified two-equation model are presented to predict electron and phonon temperatures in the film for various film thicknesses. It is found that electron and phonon temperatures predicted from the Boltzmann equation differ from the solution of two-equation model in the film for small film thickness. As the film thickness increases, this difference becomes negligibly small. Two-equation model predicts higher electron and phonon temperatures than those obtained from the solutions of the Boltzmann equation in the vicinity of the high temperature edge. This becomes opposite in the region of the low temperature edge.
机译：研究了膜厚度对铝薄膜中非平衡能量传输的影响。提出了玻尔兹曼方程和修正的两方程模型的解，以预测各种膜厚度下膜中的电子和声子温度。结果发现，对于较小的膜厚，根据玻尔兹曼方程预测的电子和声子温度与膜中的两方程模型解不同。随着膜厚度的增加，该差异变得可以忽略不计。两方程模型预测的电子和声子温度将比在高温边缘附近的玻尔兹曼方程的解所获得的温度高。这在低温边缘区域变得相反。

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