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首页> 外文期刊>Physica, B. Condensed Matter >Numerical optimization of carrier confinement characteristics in (Al _xGa _(1-x)N/AlN)SLs/GaN heterostructures
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Numerical optimization of carrier confinement characteristics in (Al _xGa _(1-x)N/AlN)SLs/GaN heterostructures

机译：（Al _xGa _（1-x）N / AlN）SLs / GaN异质结构中载流子限制特性的数值优化

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摘要

We present numerical optimization of carrier confinement characteristics in (Al _xGa _(1-x)N/AlN)SLs/GaN heterostructures in the presence of spontaneous and piezoelectrically induced polarization effects. The calculations were made using a self-consistent solution of the Schr?dinger, Poisson, potential and charge balance equations. It is found that the sheet carrier density in GaN channel increases nearly linearly with the thickness of AlN although the whole thickness and equivalent Al composition of Al _xGa _(1-x)N/AlN superlattices (SLs) barrier are kept constant. This result leads to the carrier confinement capability approaches saturation with thicknesses of AlN greater than 0.6 nm. Furthermore, the influence of carrier concentration distribution on carrier mobility was discussed. Theoretical calculations indicate that the achievement of high sheet carrier density is a trade-off with mobility.
机译：我们提出了在自发和压电感应极化效应的存在下（Al _xGa _（1-x）N / AlN）SLs / GaN异质结构中载流子限制特性的数值优化。该计算使用薛定？，泊松，势能和电荷平衡方程的自洽解进行。发现尽管Al _xGa _（1-x）N / AlN超晶格（SLs）势垒的整体厚度和等效Al组成保持恒定，但GaN沟道中的薄层载流子密度几乎随AlN的厚度线性增加。该结果导致载流子限制能力接近饱和，并且AlN的厚度大于0.6 nm。此外，讨论了载流子浓度分布对载流子迁移率的影响。理论计算表明，实现高的纸页载体密度是对迁移率的权衡。

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