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首页> 外文期刊>Physica, C. Superconductivity and its applications >Improved textured La2Zr2O7 buffer on La3TaO7 seed for all-MOD Buffer/YBCO coated conductors
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Improved textured La2Zr2O7 buffer on La3TaO7 seed for all-MOD Buffer/YBCO coated conductors

机译：改进的La3TaO7种子上的纹理化La2Zr2O7缓冲液，用于全MOD缓冲液/ YBCO涂层导体

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The overall purpose of this research is to develop a potentially low-cost, high throughput high yield,, manufacturing process for buffer deposition, and to gain a fundamental understanding of buffer layers required for an all metal-organic deposition (MOD) based chemical solution approach This understanding is critical to the development of a reliable, robust, low-cost, long-length manufacturing process of 2G wires. The standard RABiTS architectures consists of a starting template of biaxially textured Ni-W (5 at.%) substrate with a seed layer of Y2O3, a barrier layer of YSZ, and a CeO2 cap. In this three-layer architecture, all the buffers are deposited using reactive sputtering. We have recently demonstrated that the barrier properties and the performance of MOD La2Zr2O7 (LZO) match that of sputtered YSZ layers. In this work, the texture of MOD LZO was also improved by inserting a sputtered Y2O3 seed layer on which LZO grows without any degradation of texture. Significant improvement in the texture of sputtered Y2O3 seeds on NiW substrates is usually observed which is then transferred to the LZO layer. A key challenge for an all-solution approach is to replace the sputtered seed layer with a possible MOD seed layer with improved texture and on which no degradation of LZO texture occurs. Very recently, we have grown MOD La3TaO7 (LTO) seeds directly on biaxially textured Ni-W (3 at.%) with improved texture. In this study, we report a systematic investigation of the growth MOD LZO barrier layer on MOD LTO seeds. Preliminary results show that it is possible to grow MOD LZO with improved texture on MOD LTO seeds, This approach could be potentially used for future all MOD buffer/YBCO coated conductors. Published by Elsevier B.V.
机译：这项研究的总体目的是开发一种潜在的低成本，高产量，高产量的缓冲沉积制造工艺，并获得对基于全金属有机沉积（MOD）的化学解决方案所需的缓冲层的基本了解方法这种理解对于开发可靠，健壮，低成本，长距离的2G线制造工艺至关重要。标准的RABiTS体系结构由双轴织构Ni-W（5％原子）衬底的起始模板组成，该衬底具有Y2O3的种子层，YSZ的阻挡层和CeO2帽。在此三层体系结构中，所有缓冲区均使用反应溅射沉积。最近，我们证明了MOD La2Zr2O7（LZO）的势垒性能和性能与溅射YSZ层的势垒性能和性能相匹配。在这项工作中，通过插入溅射的Y2O3种子层（在其上生长LZO且不会降低纹理）也改善了MOD LZO的纹理。通常观察到NiW衬底上溅射的Y2O3种子的质构得到了显着改善，然后转移到LZO层。全解决方案的关键挑战是，用可能具有改进的纹理并且其上不会发生LZO纹理退化的MOD种子层替换溅射的种子层。最近，我们已经在具有改善了质感的双轴织构Ni-W（3 at。％）上直接生长了MOD La3TaO7（LTO）种子。在这项研究中，我们报告了在MOD LTO种子上生长MOD LZO阻挡层的系统研究。初步结果表明，可以在MOD LTO种子上生长具有改善的质地的MOD LZO。这种方法可能潜在地用于将来所有MOD缓冲液/ YBCO涂层的导体。由Elsevier B.V.发布

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