Two-dimensional fractal-like growth on semiconductors: The formation of continuous manganese monosilicide ultrathin films on Si(111)

Zou Z.-Q.; Li W.-C.

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Two-dimensional fractal-like growth on semiconductors: The formation of continuous manganese monosilicide ultrathin films on Si(111)

机译：半导体上的二维分形生长：在Si（111）上形成连续的单硅化锰锰超薄膜

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Continuous crystalline MnSi ultrathin films with atomically flat surfaces, which are highly expected to find an application in Si-based spintronics, are grown on Si(111)-7×7 by solid phase epitaxy method. The interfacial reaction between Mn and Si and the formation processes of the films as well as their morphological variation with annealing temperature are investigated using scanning tunneling microscopy. The MnSi ultrathin films form in a two-dimensional (2D) fractal-like mode only at a Mn coverage above ～2 ML and at an annealing temperature in the narrow range of ～250-300 °C. Above ～300 °C, the growth mode gradually transforms into Volmer-Weber mode and correspondingly, the continuous films transform into 2D compact islands. The films grow with a thickness unit of quadruple layer, which is consistent with the B20-type MnSi structure.

机译：通过固相外延法在Si（111）-7×7上生长了具有原子平面的连续结晶MnSi超薄膜，人们期望将其应用于Si基自旋电子学中。利用扫描隧道显微镜研究了Mn和Si之间的界面反应，薄膜的形成过程以及随退火温度变化的形貌。 MnSi超薄膜仅在〜2 ML以上的Mn覆盖率和〜250-300°C的窄范围内的退火温度下才以二维（2D）分形模式形成。在〜300°C以上，生长模式逐渐转变为Volmer-Weber模式，相应地，连续膜转变为二维紧凑岛。薄膜以四层厚度单位生长，这与B20型MnSi结构一致。

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《Physics Letters, A》 |2011年第4期|共6页
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Zou Z.-Q.; Li W.-C.;
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Fractal growth; Manganese silicides; Scanning tunneling microscopy; Spintronics; Thin film structures;

机译：分形生长;硅化锰;扫描隧道显微镜;自旋电子学;薄膜结构;

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专利

1. Two-dimensional fractal-like growth on semiconductors: The formation of continuous manganese monosilicide ultrathin films on Si(111) [J] . Zou Z.-Q., Li W.-C. Physics Letters, A . 2011,第4期

机译：半导体上的二维分形生长：在Si（111）上形成连续的单硅化锰锰超薄膜
2. A van der Waals epitaxial growth of ultrathin two-dimensional Sn film on graphene covered Cu(111) substrate [J] . Wu Haifei, Tang Jiahao, Liang Qifeng, Applied Physics Letters . 2019,第14期

机译：石墨烯覆盖的Cu（111）衬底上超薄二维Sn膜的Van der Waals外延生长
3. Ultrathin-film growth of para-sexiphenyl (II): Formation of large-size domain and continuous thin film [J] . Yang JL, Wang T, Wang HB, The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical . 2008,第26期

机译：对-联苯胺（II）的超薄膜生长：大尺寸畴和连续薄膜的形成
4. Nanoscale Heat Transport through Epitaxial Ultrathin Hetero Films: Bi(111)/Si(001) and Bi(111)/Si(111) [C] . Anja Hanisch-Blicharski, Simone Wall, Annika Kalus, Materials Research Society Meeting . 2011

机译：纳米级热传输通过外延超薄杂膜：Bi（111）/ Si（001）和Bi（111）/ Si（111）
5. Strain engineering of magnetic anisotropy: The epitaxial growth of cobalt -manganese -gallium Heusler alloy films on III-V semiconductors [D] . Carr, David Michael 2004

机译：磁各向异性的应变工程：III-V族半导体上钴-锰-镓赫斯勒合金膜的外延生长
6. Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate [O] . Liang-Zi Yao, Christian P. Crisostomo, Chun-Chen Yeh, -1

机译：Si（111）衬底上III-V型化合物的二维拓扑绝缘体薄膜的预计生长
7. Density-functional study of Mn monosilicide on the Si(111) surface: Film formation versus island nucleation [O] . Hortamani, M., Kratzer, P., Scheffler, M. 2007

机译：si（111）表面上的mn单硅化物的密度泛函研究：成膜与岛成核

Two-dimensional fractal-like growth on semiconductors: The formation of continuous manganese monosilicide ultrathin films on Si(111)

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