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Theoretical investigation of dielectronic recombination of Sn~(12+) ions

机译:Sn〜(12+)离子双电子复合的理论研究

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Theoretical calculations have been made for the dielectronic recombination (DR) rate coefficients of Sn~(12+) ion using a relativistic flexible atomic code with configuration interaction. Comparison of the rate coefficients for 4s, 4p, and 4d subshell excitation shows that while the 4p subshell excitation dominates over the whole temperature region, 4d subshell excitation at low temperature and 4s subshell excitation at high temperature cannot be neglected. In order to facilitate simple applications, the calculated DR rate coefficients are fitted to an empirical formula. The total DR rate coefficient is greater than either the radiative recombination or three-body recombination coefficients for electron temperatures greater than 1 eV. Therefore, DR can strongly influence the ionization balance of laser-produced tin plasmas.
机译:利用具有构型相互作用的相对论柔性原子码,对Sn〜(12+)离子的双电子复合率系数进行了理论计算。比较4s,4p和4d子壳激励的速率系数表明,尽管4p子壳激励在整个温度范围内都占主导地位,但低温下的4d子壳激励和高温下的4s子壳激励不能忽略。为了便于简单应用,将计算得出的DR速率系数拟合为经验公式。对于大于1 eV的电子温度,总DR速率系数大于辐射复合或三体复合系数。因此,DR可以强烈影响激光产生的锡等离子体的电离平衡。

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