Frequency-dependent hopping conductivity between silicon nanocrystallites: Application to porous silicon

Lampin E.; Lannoo M.; Allan G.; Delerue C.

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Frequency-dependent hopping conductivity between silicon nanocrystallites: Application to porous silicon

机译：硅纳米微晶之间随频率变化的跳跃电导率：在多孔硅中的应用

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We show how it is possible to perform a full calculation of the frequency-dependent hopping conductivity of a disordered array of semiconductor crystallites once their statistical distribution is known. We first apply this to a weakly disordered distribution of silicon spheres connected by silicon bridges and show the importance of the topology in determining the activation energy characteristic of the temperature dependence. We then use a model distribution to simulate the case of porous silicon and from this get a coherent description of various related properties. Finally, we emphasize the applicability of the method to determine the hopping conductivity of artificially built semiconductor nanostructures. [S0163-1829(98)01842-6]. [References: 28]

机译：我们展示了一旦知道了它们的统计分布，就可以对无序排列的半导体微晶进行频率相关的跳跃电导率的完整计算。我们首先将其应用于由硅桥连接的硅球的弱无序分布，并显示拓扑在确定温度依赖性的活化能特性中的重要性。然后，我们使用模型分布来模拟多孔硅的情况，并由此获得各种相关特性的连贯描述。最后，我们强调该方法在确定人造半导体纳米结构的跳跃电导率中的适用性。 [S0163-1829（98）01842-6]。 [参考：28]

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《Physical Review, B. Condensed Matter》 |1998年第18期|共5页
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Lampin E.; Lannoo M.; Allan G.; Delerue C.;
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1. Frequency-dependent hopping conductivity between silicon nanocrystallites: Application to porous silicon [J] . Lampin E., Lannoo M., Allan G., Physical Review, B. Condensed Matter . 1998,第18期

机译：硅纳米微晶之间随频率变化的跳跃电导率：在多孔硅中的应用
2. Thermal conductivity of interconnected silicon nanoparticles: Application to porous silicon nanostructures [J] . P. Chantrenne, V. Lysenko Physical review. B, Condensed Matter And Materials Physics . 2005,第3期

机译：互连硅纳米粒子的热导率：在多孔硅纳米结构中的应用
3. Boundary Processes in the Electrolyte-Silicon Interface Area during the Self-Organization of the Mosaic Structure of 3D Islets of Porous Silicon Nanocrystallites in the Long-Term Anode Etching of p-Si (100) in Electrolyte with an Internal Current Source [J] . K. B. Tynyshtykbaev, Yu. A. Ryabikin, S. Zh. Tokmoldin, Russian Microelectronics . 2015,第8期

机译：在内部电流源的电解质中p-Si（100）的长期阳极蚀刻中，多孔硅纳米微晶的3D岛的镶嵌结构的自组织过程中，电解质-硅界面区域中的边界过程
4. Stabilization of photoluminescence properties of silicon nanocrystallites by thermal carbonization of porous silicon [C] . Naderi Nima, Hashim Md. Roslan 2012 International Conference on Enabling Science and Nanotechnology . 2012

机译：多孔硅的热碳化稳定硅纳米微晶的光致发光性能
5. Optical properties of size selected nanocrystallites in porous silicon. [D] . Yamani, Zain Hassan. 1999

机译：多孔硅中尺寸选定的纳米微晶的光学性质。
6. Porous Silicon Gas Sensors: The Role of the Layer Thickness and the Silicon Conductivity [O] . Francisco Ramírez-González, Godofredo García-Salgado, Enrique Rosendo, 2020

机译：多孔硅气体传感器：层厚度和硅电导率的作用
7. BOUNDARY PROCESSES IN ELECTROLYTE — SILICON INTERFACE AREA DURING SELF–ORGANIZATION OF MOSAIC STRUCTURE OF 3D–ISLANDS OF POROUS SILICON NANOCRYSTALLITES AT LONG–TERM ANODE ETCHING OF P–SI (100) IN ELECTROLYTE WITH AN INTERNAL SOURCE OF CURRENT [O] . K. B. Tynyshtykbayev, Y. A. Ryabikin, S. Z. Tokmoldin, 2015

机译：电解质在电解质中的长期阳极蚀刻在电解质中的长期阳极蚀刻的三维岛的三维岛的三维岛硅纳米晶体的自组织中的边界过程
8. Electron Hopping Energy Influence on the Specific Heat and Conductivity of Phosphorus Doped Silicon [R] . Fabbri, M., Lima, I. C. D., Dasilva, A. F. 1982

机译：电子跃变能对磷掺杂硅比热和电导率的影响

Frequency-dependent hopping conductivity between silicon nanocrystallites: Application to porous silicon

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