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首页> 外文期刊>Physical Review, B. Condensed Matter >Defect characterization in electron-irradiated 6H-SiC by positron annihilation
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Defect characterization in electron-irradiated 6H-SiC by positron annihilation

机译：正电子an没法表征电子辐照6H-SiC中的缺陷

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Isochronal annealing investigations in electron-irradiated 6H-SiC were correlated with temperature dependent measurements of positron lifetime. It turned out that the positron trapping at temperatures up to 300 K was dominated by the trapping in shallow positron traps. These defects were already present in the unirradiated material and could be attributed to the antisite defects. The annealing of the irradiation-induced monovacancies and divacancies took a continuous course up to 1740 K. Ln the wide-temperature range between 300 and 1200 K, different monovacancylike defects annealed and above 1200 K the divacancy disappeared. The weak increase of the average positron lifetime between 750 and 1200 K detected at measurement temperatures below 300 K must be caused by partial annealing of shallow traps, probably irradiation-induced shallow traps. After the final annealing at 1740 K all of the irradiation-induced defects vanished. [S0163-1829(99)00516-0]. [References: 26]
机译：电子辐照6H-SiC的等时退火研究与正电子寿命的温度依赖性测量相关。事实证明，温度高达300 K的正电子陷阱主要由浅正电子陷阱的陷阱所主导。这些缺陷已经存在于未辐照的材料中，并且可以归因于反位缺陷。辐射诱导的单空位和双空位的退火过程持续进行到最高1740K。在300至1200 K的宽温度范围内，退火了不同的单空位状缺陷，而在1200 K以上，空位消失了。在低于300 K的测量温度下，检测到的平均正电子寿命在750至1200 K之间的微弱增加，一定是由于浅陷阱的部分退火引起的，浅陷阱可能是辐射诱发的浅陷阱。在1740 K下进行最终退火后，所有由辐射引起的缺陷都消失了。 [S0163-1829（99）00516-0]。 [参考：26]

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