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首页> 外文期刊>Physical Review, B. Condensed Matter >Level anticrossing effect on electron properties of coupled quantum wells under an in-plane magnetic field
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Level anticrossing effect on electron properties of coupled quantum wells under an in-plane magnetic field

机译：面内磁场下水平反交叉效应对耦合量子阱电子性质的影响

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摘要

The influence of an in-plane magnetic field on the energy spectrum and zero-temperature equilibrium properties of tunnel-coupled double and triple quantum wells is studied. Both the appearance of the gap due to anticrossing of two energy branches and the peculiarities of the third-order crossing point (for symmetric triple quantum well case) are discussed. As results, magnetization of two-dimensional electrons in double and triple quantum wells is modified essentially if the Fermi level is localized near such peculiarities. Another effect under consideration is the interlevel charge redistribution between quantum wells and the transverse voltage induced by the in-plane magnetic field. Self-consistent numerical calculations for double and triple quantum wells, which take into account the modifications of energy spectra under gate voltage, are presented. [S0163-1829(99)09431-X]. [References: 23]
机译：研究了平面内磁场对隧道耦合双量子阱和三量子阱的能谱和零温平衡特性的影响。讨论了由于两个能量分支的反交叉而引起的间隙的出现以及三阶交叉点的特殊性（对于对称三量子阱情况）。结果，如果费米能级位于这种特性附近，则基本上可以改变双量子和三量子阱中二维电子的磁化强度。正在考虑的另一个效果是量子阱之间的层间电荷重新分布以及平面内磁场感应的横向电压。提出了双量子阱和三量子阱的自洽数值计算，其中考虑了栅极电压下能谱的修改。 [S0163-1829（99）09431-X]。 [参考：23]

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