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首页> 外文期刊>Physical Review, B. Condensed Matter >Ballistic spin injection from Fe(001) into ZnSe and GaAs - art. no. 241306
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Ballistic spin injection from Fe(001) into ZnSe and GaAs - art. no. 241306

机译:从Fe(001)到ZnSe和GaAs的弹道自旋注入-艺术。没有。 241306

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摘要

We consider the spin injection from Fe into ZnSe and GaAs in the ballistic limit. By means of the ab initio screened Korringa-Kohn-Rostoker method we calculate the ground-state properties of epitaxial FeZnSe(001) and FeGaAs(001) heterostructures. Three injection processes are considered: injection of hot electrons and injection of "thermal" electrons with and without an interface barrier. The calculation of the conductance by the Landauer formula shows that these interfaces act like a nearly ideal spin filter, with spin polarization as high as 99%. This can be traced back to the symmetry of the band structure of Fe for normal incidence. [References: 19]
机译:我们认为,在弹道极限内,铁自旋注入到ZnSe和GaAs中。通过从头开始筛选的Korringa-Kohn-Rostoker方法,我们计算了外延Fe ZnSe(001)和Fe GaAs(001)异质结构的基态性质。考虑了三种注入过程:注入热电子和注入有或没有界面势垒的“热”电子。用Landauer公式对电导进行计算表明,这些界面的行为类似于近乎理想的自旋滤波器,自旋极化率高达99%。这可以追溯到法向入射的铁的能带结构的对称性。 [参考:19]

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