Synthesis and crystal structure of cobalt(II) Schiff base precursor for cobalt oxide thin film by thermal chemical vapor deposition

Sravanthi P.; Chandrakala C.; Bharath S. Raj; Johnson M. G.; Arokiasamy S.; Nagaraja K. S.; Jeyaraj B.

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Synthesis and crystal structure of cobalt(II) Schiff base precursor for cobalt oxide thin film by thermal chemical vapor deposition

机译：热化学气相沉积法制备氧化钴薄膜的席夫钴（II）席夫碱前驱体及其晶体结构

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The tetrahedral Schiff base complex bis(N-isopropylsalicylaldimine)cobalt(II) [Co(saliprn)(2)] (CSI) was prepared by template method. The complex was characterized by FT-IR, mass spectroscopy, TG/DTA and single crystal X-ray structure determination analysis. The dynamic TG analysis showed that the complex is completely volatile. The equilibrium vapor pressure of the complex was studied by non isothermal and isothermal thermogravimetric transpiration techniques over the temperature range of 474-514 K. The E-a (48.4 kJ mol(-1)) and Delta H-sub (111.54 kJ mol(-1)) for the complex and expression for temperature dependence of vapor pressure (Pe) were obtained. The thermal behavior of the cobalt(II) complex was studied by thermogravimetry techniques using different non -isothermal heating rates under nitrogen atmosphere. The complex was found to be volatile and used in thermal chemical vapor deposition for the development of nanocrystalline cobalt oxide thin films over silica substrates. These nanocrystalline thin films were analyzed by XRD and SEM confirmed the presence of Co3O4 phase with almost nil carbon. (C) 2015 Elsevier Ltd. All rights reserved.

机译：通过模板法制备了四面体席夫碱配合物双（N-异丙基水杨醛亚胺）钴（II）[Co（saliprn）（2）]（CSI）。通过FT-IR，质谱，TG / DTA和单晶X射线结构测定分析对络合物进行表征。动态TG分析表明该络合物是完全挥发性的。通过非等温和等温热重蒸腾技术研究了该复合物的平衡蒸气压，温度范围为474-514K。Ea（48.4 kJ mol（-1））和Delta H-sub（111.54 kJ mol（-1）））的形式，得到了蒸气压（Pe）随温度的关系式。通过在氮气氛下使用不同的非等温加热速率，通过热重技术研究了钴（II）配合物的热行为。发现该络合物是挥发性的，并用于热化学气相沉积中，用于在二氧化硅基底上开发纳米晶氧化钴薄膜。通过XRD和SEM分析了这些纳米晶体薄膜，证实了碳几乎为零的Co3O4相的存在。（C）2015 Elsevier Ltd.保留所有权利。

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《Polyhedron: The International Journal for Inorganic and Organometallic Chemistry》 |2016年第null期|共8页
作者
Sravanthi P.; Chandrakala C.; Bharath S. Raj; Johnson M. G.; Arokiasamy S.; Nagaraja K. S.; Jeyaraj B.;
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Cobalt complex; Thermo gravimetric analysis; Vapor pressure and kinetics; Cobalt oxide thin films; SEM and XRD;

机译：钴配合物;热重分析;蒸气压和动力学;氧化钴薄膜;SEM和XRD;

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1. Synthesis and crystal structure of cobalt(II) Schiff base precursor for cobalt oxide thin film by thermal chemical vapor deposition [J] . Sravanthi P., Chandrakala C., Bharath S. Raj, Polyhedron: The International Journal for Inorganic and Organometallic Chemistry . 2016,第Null期

机译：热化学气相沉积法制备氧化钴薄膜的席夫钴（II）席夫碱前驱体及其晶体结构
2. Diamine Adduct of Cobalt(II) Chloride as a Precursor for Atomic Layer Deposition of Stoichiometric Cobalt(II) Oxide and Reduction Thereof to Cobalt Metal Thin Films [J] . Vayrynen Katja, Hatanpaa Timo, Mattinen Miika, Chemistry of Materials: A Publication of the American Chemistry Society . 2018,第10期

机译：氯化钴（II）氯化物的二胺加合物作为原子层沉积化学计量钴（II）氧化物的原子层沉积，并将其还原为钴金属薄膜
3. Cobalt(I) Olefin Complexes: Precursors for Metal-Organic Chemical Vapor Deposition of High Purity Cobalt Metal Thin Films [J] . Hamilton Jeff A., Pugh Thomas, Johnson Andrew L., Inorganic Chemistry: A Research Journal that Includes Bioinorganic, Catalytic, Organometallic, Solid-State, and Synthetic Chemistry and Reaction Dynamics . 2016,第14期

机译：钴（I）烯烃配合物：高纯度钴金属薄膜的金属有机化学气相沉积的前体
4. Cobalt oxide thin films prepared by metalorganic chemical vapor deposition from cobalt acetylacetonate [C] . A.U. Mane, K. Shalini, S.A. Shivashankar, European conference on chemical vapor deposition . 2001

机译：通过丙酸钴的金属化学气相沉积制备的氧化钴薄膜
5. I. Synthesis of metal-organic chemical vapor deposition precursors and their use in oxide thin film depositions and II. Synthesis of monomeric tantalum(IV) amido complexes. [D] . Suh, Seigi. 1996

机译：I.金属有机化学气相沉积前体的合成及其在氧化物薄膜沉积中的用途II。单体钽（IV）酰胺配合物的合成。
6. Synthesis of Cobalt Oxides Thin Films Fractal Structures by Laser Chemical Vapor Deposition [O] . P. Haniam, C. Kunsombat, S. Chiangga, -1

机译：激光化学气相沉积法合成氧化钴薄膜的分形结构
7. Cobalt(I) olefin complexes:precursors for metal-organic chemical vapor deposition of high purity cobalt metal thin films [O] . Hamilton Jeff A., Pugh Thomas, Johnson Andrew L., 2016

机译：钴（I）烯烃配合物：高纯度钴金属薄膜的金属有机化学气相沉积前体

Synthesis and crystal structure of cobalt(II) Schiff base precursor for cobalt oxide thin film by thermal chemical vapor deposition

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