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Extreme ionization of Xe clusters driven by ultraintense laser fields

机译:超强激光场驱动Xe团簇的极端电离

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We applied theoretical models and molecular dynamics simulations to explore extreme multielectron ionization in Xe-n clusters (n=2-2171, initial cluster radius R-0=2.16-31.0 A) driven by ultraintense infrared Gaussian laser fields (peak intensity I-M=10(15)-10(20) W cm(-2), temporal pulse length tau=10-100 fs, and frequency nu=0.35 fs(-1)). Cluster compound ionization was described by three processes of inner ionization, nanoplasma formation, and outer ionization. Inner ionization gives rise to high ionization levels (with the formation of {Xeq+}(n) with q=2-36), which are amenable to experimental observation. The cluster size and laser intensity dependence of the inner ionization levels are induced by a superposition of barrier suppression ionization (BSI) and electron impact ionization (EII). The BSI was induced by a composite field involving the laser field and an inner field of the ions and electrons, which manifests ignition enhancement and screening retardation effects. EII was treated using experimental cross sections, with a proper account of sequential impact ionization. At the highest intensities (I-M=10(18)-10(20) W cm(-2)) inner ionization is dominated by BSI. At lower intensities (I-M=10(15)-10(16) W cm(-2)), where the nanoplasma is persistent, the EII contribution to the inner ionization yield is substantial. It increases with increasing the cluster size, exerts a marked effect on the increase of the {Xeq+}(n) ionization level, is most pronounced in the cluster center, and manifests a marked increase with increasing the pulse length (i.e., becoming the dominant ionization channel (56%) for Xe-2171 at tau=100 fs). The EII yield and the ionization level enhancement decrease with increasing the laser intensity. The pulse length dependence of the EII yield at I-M=10(15)-10(16) W cm(-2) establishes an ultraintense laser pulse length control mechanism of extreme ionization products. (c) 2007 American Institute of Physics.
机译:我们应用理论模型和分子动力学模拟,探索了由超高强度红外高斯激光场(峰值强度IM = 10)驱动的Xe-n簇(n = 2-2171,初始簇半径R-0 = 2.16-31.0 A)中的极端多电子电离。 (15)-10(20)W cm(-2),时间脉冲长度tau = 10-100 fs,频率nu = 0.35 fs(-1))。通过内部电离,纳米等离子体形成和外部电离的三个过程描述了簇化合物的电离。内在电离引起高电离水平(随着q = 2-36的{Xeq +}(n)的形成),这适合于实验观察。内在电离能级的团簇大小和激光强度依赖性是由势垒抑制电离(BSI)和电子碰撞电离(EII)的叠加引起的。 BSI由包含激光场和离子和电子内部场的复合场诱导,表现出点火增强和屏蔽延迟效应。 EII使用实验横截面进行处理,并适当考虑了顺序碰撞电离。在最高强度(I-M = 10(18)-10(20)W cm(-2))下,内部​​电离受BSI支配。在较低的强度(I-M = 10(15)-10(16)W cm(-2))下,其中纳米等离子体是持久的,EII对内部电离产率的贡献很大。它随着簇大小的增加而增加,对{Xeq +}(n)电离水平的增加产生显着影响,在簇中心最明显,并且随着脉冲长度的增加而显着增加(即成为主要的Xe-2171在tau = 100 fs时的电离通道(56%)。 EII产率和电离能级增强随激光强度的增加而降低。在I-M = 10(15)-10(16)W cm(-2)时EII产量的脉冲长度依赖性建立了极端电离产物的超强激光脉冲长度控制机制。 (c)2007年美国物理研究所。

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