• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>The journal of physical chemistry, A. Molecules, spectroscopy, kinetics, environment, & general theory >Low-Energy Electron-Induced Processes in Fluorinated Copper Phthalocyanine Films Observed by F~-Desorption:Why So Little Damage?
【24h】

Low-Energy Electron-Induced Processes in Fluorinated Copper Phthalocyanine Films Observed by F~-Desorption:Why So Little Damage?

机译：F〜-解吸观察氟代酞菁铜薄膜中的低能电子诱导过程：为什么损伤很小？

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

As an indication of damage induced by hot electrons in an organic electronic material,the desorption of F~-ions from a thin perfluorinated copper phthalocyanide film on SiO2 under low-energy(0-25 eV)electron impact has been recorded mass spectrometrically.Yields and damage cross sections are very low.No strong features due to negative ion resonances are found in the electron energy dependence of the desorption yield;rather the yield function rises from a threshold at about 5-6 eV continuously(with some weak structure)throughout the measured range.We discuss these findings in terms of the electronic structure of the film,as well as parameters influencing the relevant bond breaking process.We emphasize the strong influence of energy redistribution,which quenches normally long-lived negative ion resonances and selects localized and strongly repulsive excitations,as often observed in electronically induced bond breaking at surfaces.The improved understanding should be helpful in the selection of low-damage materials for organic semiconductor devices and for selection of operation parameters.
机译：为了表明有机电子材料中热电子引起的破坏，已通过质谱记录了低能（0-25 eV）电子撞击下SiO2上全氟化铜酞菁薄膜上F〜离子的解吸。在解吸产率的电子能量依赖性中未发现由于负离子共振引起的强特征;而是在整个过程中，屈服函数从约5-6 eV的阈值连续上升（具有一些弱结构）我们将根据膜的电子结构以及影响相关键断裂过程的参数来讨论这些发现。我们强调能量重新分布的强大影响，这通常会消灭长期存在的负离子共振并选择局部以及在表面的电子诱导键断裂中经常观察到的强烈排斥性激发。用于有机半导体器件和用于选择操作参数的低损伤材料的离子。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号