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首页> 外文期刊>The journal of physical chemistry, A. Molecules, spectroscopy, kinetics, environment, & general theory >Quartz Crystal Microbalance Studies of Al2O3 Atomic Layer Deposition Using Trimethylaluminum and Water at 125
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Quartz Crystal Microbalance Studies of Al2O3 Atomic Layer Deposition Using Trimethylaluminum and Water at 125

机译：三甲基铝和125℃水对Al2O3原子层沉积的石英微平衡研究

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摘要

Al2O3 atomic layer deposition (ALD) growth with Al(CH3)3 (trimethylaluminum (TMA)) and H2O as the reactants was examined at the relatively low temperature of 125 C using quartz crystal microbalance (QCM) measurements. The total Al2O3 ALD mass gain per cycle (MGPC) and MGPCs during the individual TMA and H2O reactions were measured versus TMA and H2O exposures. The Al2O3 MGPC increased with increasing H2O and TMA exposures at fixed TMA and H2O exposures, respectively. However, the TMA and H2O reactions were not completely self-limiting. The slower surface reaction kinetics at lower temperature may require very long exposures for the reactions to reach completion. The Al2O3 MGPCs increased quickly versus H2O exposure and slowly reached limiting values that were only weakly dependent on the TMA doses. Small TMA exposures were also sufficient for the Al2O3 MGPCs to reach different limiting values for different H2O doses. The TMA MGPCs increased for higher TMA exposures at all H2O exposures. In contrast, the H2O MGPCs decreased for higher TMA exposures at all H2O exposures. This decrease may occur from more dehydroxylation at larger hydroxyl coverages after the H2O exposures. The hydroxyl coverage after the H2O exposure was dependent only on the H2O exposure. The Al2O3 MGPC was also linearly dependent on the hydroxyl coverage after the H2O dose. Both the observed hydroxyl coverage versus H2O exposure and the Al2O3 ALD growth versus H2O and TMA exposures were fit using modified Langmuir adsorption isotherm expressions where the pressures are replaced with exposures. These results should be useful for understanding low-temperature Al2O3 ALD, which is important for coating organic, polymeric, and biological substrates.
机译：使用石英晶体微量天平（QCM）测量在125°C的较低温度下检查了以Al（CH3）3（三甲基铝（TMA））和H2O为反应物的Al2O3原子层沉积（ALD）生长。测量了在单独的TMA和H2O反应过程中，每个周期的总Al2O3 ALD质量增加（MGPC）和MGPC与TMA和H2O暴露的关系。在固定的TMA和H2O暴露下，Al2O3 MGPC分别随着H2O和TMA暴露的增加而增加。但是，TMA和H2O反应并非完全自限。在较低温度下较慢的表面反应动力学可能需要很长时间才能使其完全反应。 Al2O3 MGPC与H2O接触相比迅速增加，并缓慢达到极限值，该极限值仅微弱地依赖于TMA剂量。小剂量的TMA暴露也足以使Al2O3 MGPC对于不同的H2O剂量达到不同的极限值。在所有H2O暴露下，TMA MGPC均增加，以实现更高的TMA暴露。相反，在所有H2O暴露下，较高的TMA暴露，H2O MGPC均降低。这种减少可能是由于暴露于H2O后在较大的羟基覆盖率下更多的脱羟基作用而引起的。 H2O暴露后的羟基覆盖率仅取决于H2O暴露。 Al2O3 MGPC还线性依赖于H2O剂量后的羟基覆盖率。使用修改的Langmuir吸附等温线表达式拟合压力和暴露量，可以比较观察到的羟基覆盖率与H2O接触量以及Al2O3 ALD生长与H2O和TMA接触量。这些结果应有助于理解低温Al2O3 ALD，这对于涂覆有机，聚合物和生物基材很重要。

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