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首页> 外文期刊>The journal of physical chemistry, A. Molecules, spectroscopy, kinetics, environment, & general theory >Promoted Electron Transfer along the Newly Formed Bi-O-S Bond in Bi2O(OH)(2)SO4
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Promoted Electron Transfer along the Newly Formed Bi-O-S Bond in Bi2O(OH)(2)SO4

机译：沿着Bi2O（OH）（2）SO4中新形成的Bi-O-S键促进电子转移

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Today, research is increasingly focused on surface control of semiconductors; however, very little is known about the effect of bulk chemical bonds on photoelectrochemistry properties. In this report, Bi2O(OH)(2)SO4 with and without specific Bi-O-S bonds (WB and WOB) is synthesized via hydrothermal and water bath methods, respectively, and we reveal the Bi-O-S bond-dependent photoelectrochemistry properties. Both. WB and WOB belong to a monoclinic space group (P21/c), but the newly synthesized WB has different unit cell parameters of a = 8.062 angstrom, b = 8.384 angstrom, and c = 5.881 angstrom, compared with WOB (a = 7.692(3) angstrom, b = 13.87(1) angstrom, c = 5.688(2) angstrom). Compared with WOB (4.18 eV), WB has a narrower band gap (3.6 eV), higher electrical conductivity, and an increased charge separation efficiency. It is found that the electrons are easy to transfer along the newly formed Bi-O-S bond in bulk; thus, the Bi-O-S bonds in WB have efficiently improved the photoelectrochemistry properties. As a result, WB exhibits a 1.1 times higher photocatalytic activity than WOB for the degradation of RbB under ultraviolet light irradiation (<420 nm). This helps us to understand the photoelectrochemistry properties from crystal bulk, but not merely from the crystal surface; thus, this study provides a new idea for improved photoelectrochemistry properties of semiconductors.
机译：如今，研究越来越集中在半导体的表面控制上。然而，关于本体化学键对光电化学性质的影响知之甚少。在此报告中，分别通过水热法和水浴法合成了具有和不具有特定Bi-O-S键（WB和WOB）的Bi2O（OH）（2）SO4，并且我们揭示了Bi-O-S键依赖性的光电化学性质。都。 WB和WOB属于单斜空间群（P21 / c），但是新合成的WB与WOB相比具有不同的晶胞参数，a = 8.062埃，b = 8.384埃和c = 5.881埃（a = 7.692（ 3）埃，b = 13.87（1）埃，c = 5.688（2）埃）。与WOB（4.18 eV）相比，WB具有更窄的带隙（3.6 eV），更高的电导率和更高的电荷分离效率。发现电子容易沿着新形成的Bi-O-S键大量转移;因此，WB中的Bi-O-S键有效地改善了光电化学性能。结果，在紫外光照射（<420 nm）下，WB降解RbB的光催化活性比WOB高1.1倍。这有助于我们从晶体块而不是仅从晶体表面了解光电化学性质。因此，本研究为改善半导体的光电化学性质提供了新的思路。

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