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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Studies of Photogenerated Charge Carriers from Donor-Acceptor Interfaces in Organic Field Effect Transistors. Implications for Organic Solar Cells
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Studies of Photogenerated Charge Carriers from Donor-Acceptor Interfaces in Organic Field Effect Transistors. Implications for Organic Solar Cells

机译：从有机场效应晶体管的供体-受体界面研究光生电荷载流子。对有机太阳能电池的影响

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摘要

Bilayer organic field effect transistor (OFET) structures consisting of an optically active electron donor (D) and an electrically active electron acceptor (A) system offer a quantitative device tool for characterizing photoinduced charge transport processes. Here, we report an investigation of the photoinduced response of a bilayer OFET fabricated from a naphthalene-bis(dicarboximide)-based polymer (N2200) as the n-channel A transport layer and a p-channel regioregular poly-3-hexylthiophene (P3HT) top D layer. This FET exhibits characteristic steady-state spectral response as well as transient profiles as function of the gate voltage (V_g), yielding valuable information on bulk and interfacial charge transport properties. Thus, the derived N2200 electron mobility is shown to be in good agreement with bulk measurements (significantly greater than that of PCBM), and the N2200/P3HT interface is shown to be a highly efficient structure for charge transfer and free carrier generation.
机译：由光学活性电子供体（D）和电子活性电子受体（A）系统组成的双层有机场效应晶体管（OFET）结构提供了用于表征光感应电荷传输过程的定量设备工具。在这里，我们报告了由萘-双（二甲叉酰亚胺）基聚合物（N2200）作为n通道A传输层和p通道区域规则的聚-3-己基噻吩（P3HT）制成的双层OFET的光诱导响应的研究。 ）顶层D层。该FET表现出特征性的稳态频谱响应以及随栅极电压（V_g）变化的瞬态曲线，可提供有关体积和界面电荷传输特性的有价值的信息。因此，显示得出的N2200电子迁移率与批量测量结果非常吻合（显着大于PCBM），并且N2200 / P3HT接口显示为电荷转移和自由载流子生成的高效结构。

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