Nanocrystalline GaN films are fabricated on Si. substrates by pulsed laser deposition to achieve enhanced field emission (FE) based on microstructural engineering. In the process, the microstructure including crystallization and orientation can be conveniently and directly modulated by the temperature. XRD reveals that the fabrication temperature affects the crystallinity and grain size of the GaN films. A strong correlation between the microstructure and FE properties is also observed. The turn-on electric field decreases from 30.5 to 2.3 V/μm, and the FE current density increases bv two to three orders of magnitude based on the microstract by two to three orders of magnitude based on the microstructure of the GaN films. A qualitative grain boundary conduction model is proposed to explain the strong correlation between the microstructure and FE properties. The results demonstrate the importance of microstructural effects on FE, and they must be considered in the design and production of FE GaN devices.
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机译：在Si上制造纳米晶GaN膜。在微结构工程的基础上，通过脉冲激光沉积沉积基板以实现增强的场发射（FE）。在此过程中，包括结晶和取向在内的微观结构可以方便地通过温度直接调节。 XRD表明，制造温度影响GaN膜的结晶度和晶粒尺寸。还观察到微观结构和有限元性能之间的强相关性。导通电场从30.5降低到2.3 V /μm，并且基于GaN的微观结构，FE电流密度增加了2到3个数量级，增加了2到3个数量级。提出了定性的晶界传导模型来解释微观结构和有限元性能之间的强相关性。结果证明了微结构效应对有限元的重要性，在有限元GaN器件的设计和生产中必须考虑它们。
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