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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Effective Bandgap Lowering of CdS Deposited by Successive Ionic Layer Adsorption and Reaction
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Effective Bandgap Lowering of CdS Deposited by Successive Ionic Layer Adsorption and Reaction

机译：通过连续离子层吸附和反应有效降低CdS的能带隙

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摘要

SILAR (successive ionic layer adsorption and reaction) is a solution process used to deposit semiconductors that has become very common in the past few years as a method to deposit light absorbers in nanoporous solar cells. Films of CdS (possibly the most commonly deposited semiconductor using this method) often show an anomalously low apparent bandgap (lowered by as much as 10%) for sufficiently thick films, although this effect has been ignored in most cases, Here, we study this bandgap lowering and show that it is due not so much to a lower bandgap but rather to a particularly long absorption tail that extends far into the red, and that is amplified by a large optical thickness in the high surface area nanoporous films. The tail is presumably due to as yet unidentified, but probably bulk defects in the CdS. Additionally, the absorption coefficient of the SILAR CdS was nearly twice as high as normal values.
机译：SILAR（成功的离子层吸附和反应）是一种用于沉积半导体的溶液工艺，在过去的几年中，作为在纳米多孔太阳能电池中沉积光吸收剂的一种方法，它已经变得非常普遍。对于足够厚的薄膜，CdS薄膜（可能是使用这种方法沉积的最常见的半导体）通常显示出异常低的表观带隙（降低了多达10％），尽管在大多数情况下这种影响都被忽略了。降低带隙并表明，这与其说是由于较低的带隙无关，不如说是由于特别长的吸收尾延伸到红色，并且在高表面积纳米多孔膜中被较大的光学厚度所放大。尾部可能是由于尚未确定，但可能是CdS中的大量缺陷。另外，SILAR CdS的吸收系数几乎是正常值的两倍。

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