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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Observations of New Dirac Points in One-Dimensionally-Rippled Graphene on Hexagonal BN Using Scanning Tunneling Spectroscopy
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Observations of New Dirac Points in One-Dimensionally-Rippled Graphene on Hexagonal BN Using Scanning Tunneling Spectroscopy

机译：扫描隧道光谱法观测六角形氮化硼上一维波纹石墨烯中的新狄拉克点

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摘要

Theories predicted that one-dimensional superlattice potentials in graphene would induce new Dirac points, instead of gap opening, due to lattice-induced chirality of charge carriers, but experimental evidence is rarely available in the literature. Here, we report observations of new Dirac points in one-dimensionally rippled graphene on hexagonal boron nitride (h-BN) using scanning tunneling microscopy and spectroscopy. The rippled graphene, formed due to thermal procedures, showed two new Dirac points above and below the Fermi level. The energy difference between a new Dirac point and the Fermi level was proportional to 1/L, where L was the period of a ripple, in agreement with theoretical predictions. Our study shows that the one-dimensional periodic potential is an accessible component for controlling the electronic properties of graphene.
机译：理论预测，由于晶格诱导的电荷载流子手性，石墨烯中的一维超晶格电势将诱导新的狄拉克点，而不是空位开放，但文献中很少有实验证据。在这里，我们报告使用扫描隧道显微镜和光谱学在六方氮化硼（h-BN）上的一维波纹石墨烯中观察到新的狄拉克点。由于热过程而形成的波纹石墨烯在费米能级之上和之下显示了两个新的狄拉克点。与理论预测相一致，新的狄拉克点与费米能级之间的能量差与1 / L成正比，其中L是波动周期。我们的研究表明，一维周期性电势是控制石墨烯电子性质的可及组件。

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