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首页> 外文期刊>Journal of Applied Polymer Science >The effects of temperature, radiation, and illumination on current-voltage characteristics of Au/PVA(Co, Zn-doped)-Si Schottky diodes
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The effects of temperature, radiation, and illumination on current-voltage characteristics of Au/PVA(Co, Zn-doped)-Si Schottky diodes

机译：温度，辐射和照度对Au / PVA（Co，Zn掺杂）/ n-Si肖特基二极管电流-电压特性的影响

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摘要

Polyvinyl alcohol (PVA)/(Co-Ni) nanofiber film was fabricated on silicon wafer using electrospinning technique. The topography of the produced PVA/(Co-Ni) nanofiber film was examined by scanning electron microscopy (SEM). The Au/Poly (vinyl alcohol) (Co, Ni-doped)-Si Schottky diode (SD) was thermally formed in evaporating system after the spinning process. At first, the current-voltage (I-V) characteristics of Au/PVA (Co, Zn-doped)-Si SD was measured at the room temperature (300 K). For the investigating the effect of temperature, illumination and radiation on Au/PVA (Co, Zn-doped)-Si SD comparatively, the measurement was performed under the illumination intensity of 200 W, at 380K, and finally the radiation dose of 22 kGy respectively. The diode characteristics such as the zero-bias barrier height (φ _(Bo)), ideality factor (n) and series resistance (R _s) were calculated at room temperature and under the condition of high temperature, illumination, and radiation. It was found that these characteristics were affected by the illumination and radiation as well as the temperature. The density of interface states (N _(ss)) distribution profiles as a function of (E _c - E _(ss)) extracted from the forward I-V measurements were also affected by illumination and radiation even if just a bit.
机译：采用静电纺丝技术在硅片上制备了聚乙烯醇（PVA）/（Co-Ni）纳米纤维薄膜。通过扫描电子显微镜（SEM）检查所生产的PVA /（Co-Ni）纳米纤维膜的形貌。在纺丝过程之后，在蒸发系统中热形成金/聚乙烯醇（掺有钴，镍的钴）/正硅肖特基二极管（SD）。首先，在室温（300 K）下测量Au / PVA（Co，Zn掺杂）/ n-Si SD的电流-电压（I-V）特性。为了比较地研究温度，光照和辐射对Au / PVA（Co，Zn掺杂）/ n-Si SD的影响，在200 W的光照强度下，在380K下进行了测量，最后测量了分别为22 kGy。在室温下以及在高温，高照度和高辐射条件下，计算出二极管的特性，例如零偏置势垒高度（φ_（Bo）），理想因子（n）和串联电阻（R s）。发现这些特性受照明，辐射以及温度的影响。从前向I-V测量中提取的界面状态（N _（ss））分布轮廓的密度与（E _c-E _（ss））的关系也受到照明和辐射的影响，即使只是一点点。

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