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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Effects of processing parameters on the properties of tantalum nitride thin films deposited by reactive sputtering
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Effects of processing parameters on the properties of tantalum nitride thin films deposited by reactive sputtering

机译：工艺参数对反应溅射沉积氮化钽薄膜性能的影响

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摘要

The effects of processing parameters on the properties of tantalum nitride thin films deposited by radio frequency reactive sputtering have been investigated. The influence of the N_2 partial and (Ar+N_2) total gas pressures as well as the sputtering power on the microstructure and electrical properties is reported. Rising the N_2 partial pressure, from 2 to 10.7 percent, induces a change in the composition of the delta-TaN phase, from TaN to TaN_(1.13). This composition change is associated with a drastic increase of the electrical resistivity over a 7.3 percent N_2 partial pressure. The total gas pressure is revealed to strongly affect the film microstructure since a variation in both composition and grain size is observed when the gas pressure rises from 6.8 to 24.6 Pa. When the sputtering power varied between 50 and 110 W, an increase of the grain size related to a decrease of the electrical resistivity is observed.
机译：研究了工艺参数对射频反应溅射沉积氮化钽薄膜性能的影响。报道了N_2总气压和（Ar + N_2）总气压以及溅射功率对显微组织和电性能的影响。将N_2分压从2％提高到10.7％，会引起δ-TaN相组成的变化，从TaN变为TaN_（1.13）。这种成分变化与电阻率在7.3％N_2分压上急剧增加有关。由于当气压从6.8 Pa升高到24.6 Pa时会观察到成分和晶粒尺寸的变化，因此总气压显着影响了薄膜的微观结构。当溅射功率在50 W至110 W之间变化时，晶粒的增加观察到与电阻率降低有关的尺寸。

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