Multiferroic behavior and electrical conduction of BiFeO_3 thin film deposited on quartz substrate

Jiagang Wu; John Wang

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Multiferroic behavior and electrical conduction of BiFeO_3 thin film deposited on quartz substrate

机译：石英衬底上沉积的BiFeO_3薄膜的多铁性行为和导电

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Multiferroic BiFeO_3 thin films were deposited on SrRuO_3-buffered quartz substrates by off-axis radio frequency magnetron sputtering. The BiFeO3 thin film exhibits the desired multiferroic behavior (2Pr～97.41μC/cm~2 and 2M_s ～10.3 emu/cm~3). On the basis of the temperature- and frequencydependent impedance studies, oxygen vacancies are shown to be responsible for the dielectric relaxation and conduction in the BiFeO3 thin film, where the scaling behavior of imaginary part of the electric modulus suggests that the relaxation mechanism does not change over the temperature range investigated.

机译：通过离轴射频磁控溅射将多铁性BiFeO_3薄膜沉积在SrRuO_3缓冲的石英基板上。 BiFeO3薄膜具有理想的多铁性行为（2Pr〜97.41μC/ cm〜2和2M_s〜10.3 emu / cm〜3）。根据温度和频率相关的阻抗研究，表明氧空位是BiFeO3薄膜中介电弛豫和传导的原因，其中电模量虚部的缩放行为表明弛豫机理没有改变在研究的温度范围内。

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《Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics》 |2010年第1期|共4页
作者
Jiagang Wu; John Wang;
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正文语种 eng
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BiFeO_3 thin films; Quartz substrate; Multiferroic properties; Impedance study;

机译：BiFeO_3薄膜;石英基板;多铁性;阻抗研究;

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机译：石英衬底上沉积的BiFeO_3薄膜的多铁性行为和导电
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Multiferroic behavior and electrical conduction of BiFeO_3 thin film deposited on quartz substrate

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