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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Effect of ammoniating temperature on microstructure and optical properties of one-dimensional GaN nanowires doped with magnesium
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Effect of ammoniating temperature on microstructure and optical properties of one-dimensional GaN nanowires doped with magnesium

机译：氨化温度对镁掺杂一维GaN纳米线微观结构和光学性能的影响

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One-dimensional GaN nanowires doped with Mg element have been successfully prepared on Si (111) substrates by magnetron sputtering through ammoniating Ga_2O_3/Ivlg thin films, and the effect of the ammoniating temperatures on the microstructure and optical properties of the GaN nanowires was investigated in detail. X-ray diffraction (XRD), X-ray photoelectron spectroscope (XPS), FT-IR spectrophotometer, Scanning electron microscope (SEM), high-resolution transmission electron microscope (TEM), and photoluminescence (PL) spectrum were carried out to characterize the microstructure, morphology, and optical properties of GaN nanowires. The results demonstrate that ammoniating temperature has a significant effect on microstructure, morphology and optical properties of GaN nanowires. GaN nanowires after ammoniation at 900 °C for 15min are straight, smooth and of uniform thickness along spindle direction with the highest crystalline quality. The growth direction of these nanowires is parallel to[l 00] orientation.
机译：磁控溅射Ga_2O_3 / Ivlg薄膜通过磁控溅射在Si（111）衬底上成功制备了掺杂Mg的一维GaN纳米线，并研究了氨化温度对GaN纳米线微观结构和光学性质的影响。详情。进行了X射线衍射（XRD），X射线光电子能谱仪（XPS），FT-IR分光光度计，扫描电子显微镜（SEM），高分辨率透射电子显微镜（TEM）和光致发光（PL）光谱的表征GaN纳米线的微观结构，形态和光学特性。结果表明，氨化温度对GaN纳米线的微观结构，形貌和光学性能有重要影响。在900°C下氨化15分钟后的GaN纳米线是直的，光滑的，沿锭子方向厚度均匀，具有最高的结晶质量。这些纳米线的生长方向平行于[100]方向。

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