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Ferromagnetism in ZnTe:Cr film grown on Si(100)

机译:Si(100)上生长的ZnTe:Cr膜中的铁磁性

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摘要

Zn_(1-x)Cr_xTe (x = 0.0 and 0.05) films were grown on Si(10 0) substrate by using thermal evaporation method. The structure of the films was investigated by X-ray diffraction and it showed the formation of ZnCrTe phase with an amorphous background, which indicated poor crystallinity. Composition analysis by XPS disclosed the presence of antiferromagnetic Cr_2O_3 and Cr precipitates. Magnetic domains were observed by using magnetic force microscopy at ambient temperature and the result showed anisotropic domains with an average size of 3.5 nm. Magnetic field dependence of magnetic moment measurements showed obvious hysteresis loop with a coercive field of 121 Oe at 300 K. Temperature dependence of magnetic moment showed short-range ferromagnetic order. The Curie temperature was estimated to be 354.5 K.
机译:Zn_(1-x)Cr_xTe(x = 0.0和0.05)膜通过热蒸发法在Si(10 0)衬底上生长。通过X射线衍射研究了膜的结构,结果表明形成了具有无定形背景的ZnCrTe相,这表明结晶性差。 XPS的成分分析表明存在反铁磁性Cr_2O_3和Cr沉淀。通过在环境温度下使用磁力显微镜观察磁畴,结果显示各向异性磁畴的平均尺寸为3.5 nm。磁矩测量的磁场依赖性显示出明显的磁滞回线,在300 K时的矫顽力为121 Oe。磁矩的温度依赖性显示出短程铁磁阶。居里温度估计为354.5K。

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