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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >An XANES and XES investigation of the electronic structure of indium rich In_xGa_(1-x)N films
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An XANES and XES investigation of the electronic structure of indium rich In_xGa_(1-x)N films

机译：XANES和XES研究富铟In_xGa_（1-x）N薄膜的电子结构

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摘要

The electronic structure of InGaN epitaxial layers grown on sapphire substrates was studied using X-ray absorption at the InL_3 and N K edges, as well as N K_a X-ray emission. Knowing that the InGaN crystallizes in an anisotropic wurtzite structure, the linear polarization of synchrotron radiation was exploited to estimate the influence of the crystal structure anisotropy on the distribution of the local density of states at the site of In and N. The calculated partial density of states describes the observed anisotropy in the measured spectra. Influence of the core-hole effect on the analyzed absorption spectra was verified and reveal that a core hole potential is effectively screened by the surface mobile electrons for the sample with maximum indium content. The bandgap values were provided for the investigated InGaN alloys and were found to vary preudo-lineary with indium content.
机译：利用在InL_3和N K边缘的X射线吸收以及N K_a X射线发射，研究了在蓝宝石衬底上生长的InGaN外延层的电子结构。知道InGaN会以各向异性纤锌矿结构结晶，因此利用同步加速器辐射的线性极化来估计晶体结构各向异性对In和N位置处的态局部密度分布的影响。状态描述了在测量光谱中观察到的各向异性。核孔效应对所分析的吸收光谱的影响得到了证实，并揭示了对于具有最大铟含量的样品，表面移动电子有效地筛选了核孔电势。为研究的InGaN合金提供了带隙值，发现该带隙值随铟含量变化而呈准线性变化。

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