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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor
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Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor

机译：Al / DNA / p-Si MIS二极管的电子性能：用作温度传感器

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摘要

The current-voltage (I-V) measurements were performed in the temperature range (200-300K) on Al/DNA/p-Si Schottky barrier type diodes. The Schottky diode shows non-ideal I-V behaviour with Ideality factors n equal to 1.34 ±0.02 and 1.70 ±0.02 at 300 K and 200 K, respectively, and is thougrit to have a metal-interface layer-semiconductor (MIS) configuration. The zero-bias barrier height ?_b determined from the I-V measurements was 0.75 ± 0.01 eV at 300 K and decreases to 0.61 ± 0.01 eV at 200 K. The forward voltage-temperature (V_F-T) characteristics were obtained from the I-V measurements in the temperature range 200-300 K at different activation currents (I_F) in the range 20 nA-6 ìA. The V_F-T characteristics were linear for three activation currents in the diode. From the V?-T characteristics at 20 nA, 100 nA and 6 ìA, the values of the temperature coefficients of the forward bias voltage (dV_F /dT) for the diode were determined as -2.30 mV K~(-1), -2.60 mV K~(-1) and -3.26 mV K~(-1) with a standard error of 0.05 mV K~(-1), respectively.
机译：在Al / DNA / p-Si肖特基势垒型二极管的温度范围（200-300K）中执行电流-电压（I-V）测量。肖特基二极管表现出非理想的I-V行为，理想因子n在300 K和200 K时分别等于1.34±0.02和1.70±0.02，并且具有金属界面层半导体（MIS）结构。通过IV测量确定的零偏置势垒高度Δ_b在300 K下为0.75±0.01 eV，在200 K下减小为0.61±0.01 eV。正向电压-温度（V_F-T）特性是从IV测量得到的。在20 nA-6ìA范围内的不同激活电流（I_F）下，温度范围为200-300K。对于二极管中的三个激活电流，V_F-T特性是线性的。根据20 nA，100 nA和6ìA时的Vβ-T特性，确定二极管的正向偏置电压的温度系数（dV_F / dT）的值为-2.30 mV K〜（-1），- 2.60 mV K〜（-1）和-3.26 mV K〜（-1），标准误差分别为0.05 mV K〜（-1）。

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